Engineering Commons^™

Plasma Treatment Method For Ohmic Contacts On Zinc Oxide Thin Film Transistors, Blaine Z. Underwood

Theses and Dissertations

This research utilizes plasma treatments as a method to decrease the contact resistance on zinc oxide (ZnO) thin film transistors (TFT). In recent years, researchers have achieved gigahertz RF switch cutoff frequency with ZnO TFTs. To further increase the cutoff frequency, the total resistance of this device must be minimized. Modern ZnO TFTs are fabricated with submicron channel lengths, which contains minimal resistance due to the TFT channel, making contact resistance significant to the total resistance of the device. This research developed a method to integrate plasma treatments into the fabrication of ZnO TFT to decrease the contact resistance, thus …