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Development Of Si Device Based Power Converters For High Temperature Operation In Hev Applications, Zhuxian Xu
Development Of Si Device Based Power Converters For High Temperature Operation In Hev Applications, Zhuxian Xu
Doctoral Dissertations
In this dissertation, the feasibility of operating Si devices at 200 ˚C [degree Celsius] is investigated and the guidelines on the development of a high temperature Si converter for operating with 105 ˚C high temperature liquid coolant in hybrid electrical vehicle (HEV) applications are provided.
First, the characterization of a Si IGBT operating at 200 ˚C junction temperatures is presented. It is shown that the commercial 175 ˚C Si IGBT under test can be successfully switched at an elevated junction temperature of 200 ˚C with increased but acceptable losses.
Second, a comprehensive evaluation of Si IGBT ruggedness at high temperature …