Open Access. Powered by Scholars. Published by Universities.®
- Keyword
-
- Berry Phase (1)
- Blanker (1)
- Capacitance-voltage (1)
- Charged Particle Optics (1)
- Complementary (1)
-
- Electron Beam Lithography (1)
- Electron beam (1)
- Gate array circuits (1)
- Heterojunction (1)
- High resolution imaging (1)
- High-k (1)
- Lanthanum compounds (1)
- Lanthanum oxide (1)
- Lithography (1)
- Metal oxide semiconductor field-effect transistors (1)
- Metal oxide semiconductors (1)
- Nano-Fabrication (1)
- Nanoelectromechanical systems (1)
- Nanostructured materials (1)
- Quantum Dot (1)
- Quantum computers (1)
- Quantum dots (1)
- Single Electron Transistor (1)
- Spectroscopic ellipsometry (1)
- VT shift (1)
- X-ray photoelectron spectroscopy (1)
Articles 1 - 3 of 3
Full-Text Articles in Engineering
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to scale (shrink) transistor dimensions to both increase the number of transistors per integrated circuit and their speed. One important aspect of scaling is the need to decrease the equivalent oxide thickness of the transistor gate dielectric while minimizing leakage current. Traditional thin layer SiO2 or SiOxNy films have been replaced by higher dielectric constant film stacks Here we study one example, the HfO2/La2O3/SiO2 stack. This dissertation describes an investigation of the use of La2O3 to reduce the threshold voltage of TiN/HfO2/SiO2/Si stacks (high-k/metal gate stacks). A significant aspect of this study is the determination of …
Quantum Dot Quantum Computation In Iii-V Type Semiconductor, Sanjay K. Prabhakar
Quantum Dot Quantum Computation In Iii-V Type Semiconductor, Sanjay K. Prabhakar
Legacy Theses & Dissertations (2009 - 2024)
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and spin of the electron can be manipulated through the application of gate potentials. In the thesis, there are two major contributions of the manipulation of electron spin. In regard to the first contribution, we present numerical simulations of such a spin in single electron devices for realistic asymmetric potentials in electrostatically confined quantum dot. Using analytical and numerical techniques we show that breaking in-plane rotational symmetry of the confining potential by applied gate voltage leads to a significant effect on the tuning …
Electron Beam Lithography Throughput And Resolution Enhancement With Innovative Blanker Design, Junru Ruan
Electron Beam Lithography Throughput And Resolution Enhancement With Innovative Blanker Design, Junru Ruan
Legacy Theses & Dissertations (2009 - 2024)
Electron Beam Lithography (EBL) is one of the most important and most widely used methods for nano-fabrication. The primary advantage of electron beam lithography is its high resolution, and its ability to expose nanometer features without a mask. On the other hand, one of the key limitations of electron beam lithography is throughput. Slow blanking speed is one of the major bottlenecks for the system speed. In this dissertation, I will first review the prior literature of high speed blanking. Thorough theoretical and experimental studies are done on the existing designs. Physical models are built and analytical ray tracing is …