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Full-Text Articles in Engineering
Metal-Silicene Interaction Studied By Scanning Tunneling Microscopy, Zhi Li, Haifeng Feng, Jincheng Zhuang, Na Pu, Li Wang, Xun Xu, Weichang Hao, Yi Du
Metal-Silicene Interaction Studied By Scanning Tunneling Microscopy, Zhi Li, Haifeng Feng, Jincheng Zhuang, Na Pu, Li Wang, Xun Xu, Weichang Hao, Yi Du
Australian Institute for Innovative Materials - Papers
Ag atoms have been deposited on 3 x 3 silicene and √3 x √3 silicene films by molecular beam epitaxy method in ultrahigh vacuum. Using scanning tunneling microscopy and Raman spectroscopy, we found that Ag atoms do not form chemical bonds with both 3 x 3 silicene and √3 x √3 silicene films, which is due to the chemically inert surface of silicene. On 3 x 3 silicene films, Ag atoms mostly form into stable flat-top Ag islands. In contrast, Ag atoms form nanoclusters and glide on silicene films, suggesting a more inert nature. Raman spectroscopy suggests that there is …
Superior Sodium-Ion Storage Performance Of Co3o4@Nitrogen-Doped Carbon: Derived From A Metal–Organic Framework, Ying Wang, Caiyun Wang, Yijing Wang, Hua-Kun Liu, Zhenguo Huang
Superior Sodium-Ion Storage Performance Of Co3o4@Nitrogen-Doped Carbon: Derived From A Metal–Organic Framework, Ying Wang, Caiyun Wang, Yijing Wang, Hua-Kun Liu, Zhenguo Huang
Australian Institute for Innovative Materials - Papers
Nitrogen-doped carbon coated Co 3 O 4 nanoparticles (Co 3 O 4 @NC) with high Na-ion storage capacity and unprecedented long-life cycling stability are reported in this paper. The Co 3 O 4 @NC was derived from a metal – organic framework ZIF-67, where the Co ions and organic linkers were, respectively, converted to Co 3 O 4 nanoparticle cores and nitrogen-doped carbon shells through a controlled two-step annealing process. The Co 3 O 4 @NC shows a porous nature with a surface area of 101 m 2 g 1 . When applied as an anode for sodium ion batteries …
Metal Frame As Local Protection Of Superconducting Films From Thermomagnetic Avalanches, Pavlo Mikheenko, J I. Vestgarden, Supratim Chaudhuri, I J. Maasilta, Y Galperin, Tom H. Johansen
Metal Frame As Local Protection Of Superconducting Films From Thermomagnetic Avalanches, Pavlo Mikheenko, J I. Vestgarden, Supratim Chaudhuri, I J. Maasilta, Y Galperin, Tom H. Johansen
Australian Institute for Innovative Materials - Papers
Thermomagnetic avalanches in superconducting films propagating extremely fast while forming unpredictable patterns, represent a serious threat for the performance of devices based on such materials. It is shown here that a normal-metal frame surrounding a selected region inside the film area can provide efficient protection from the avalanches during their propagation stage. Protective behavior is confirmed by magneto-optical imaging experiments on NbN films equipped with Cu and Al frames, and also by performing numerical simulations. Experimentally, it is found that while conventional flux creep is not affected by the frames, the dendritic avalanches are partially or fully screened by them. …
Fabrication And Characterisation Of Gaas Nanopillars Using Nanosphere Lithography And Metal Assisted Chemical Etching, A Cowley, J A. Steele, D Byrne, R K. Vijayaraghavan, P J. Mcnally
Fabrication And Characterisation Of Gaas Nanopillars Using Nanosphere Lithography And Metal Assisted Chemical Etching, A Cowley, J A. Steele, D Byrne, R K. Vijayaraghavan, P J. Mcnally
Australian Institute for Innovative Materials - Papers
We present a low-cost fabrication procedure for the production of nanoscale periodic GaAs nanopillar arrays, using the nanosphere lithography technique as a templating mechanism and the electrochemical metal assisted etch process (MacEtch). The room-temperature photoluminescence (PL) and Raman spectroscopic properties of the fabricated pillars are detailed, as are the structural properties (scanning electron microscopy) and fabrication process. From our PL measurements, we observe a singular GaAs emission at 1.43 eV with no indications of any blue or green emissions, but with a slight redshift due to porosity induced by the MacEtch process and characteristic of porous GaAs (p-GaAs). This is …