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Full-Text Articles in Engineering
Materials For Giant Spin Hall Effect Devices, Avyaya Jayanthinarasimham
Materials For Giant Spin Hall Effect Devices, Avyaya Jayanthinarasimham
Legacy Theses & Dissertations (2009 - 2024)
Studies presented in this thesis are an effort to control the growth of β W and explore
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Legacy Theses & Dissertations (2009 - 2024)
Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. …
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Metal Oxide Growth, Spin Precession Measurements And Raman Spectroscopy Of Cvd Graphene, Akitomo Matsubayashi
Legacy Theses & Dissertations (2009 - 2024)
The focus of this dissertation is to explore the possibility of wafer scale graphene-based spintronics. Graphene is a single atomic layer of sp2 bonded carbon atoms that has attracted much attention as a new type of electronic material due to its high carrier mobilities, superior mechanical properties and extremely high thermal conductivity. In addition, it has become an attractive material for use in spintronic devices owing to its long electron spin relaxation time at room temperature. This arises in part from its low spin-orbit coupling and negligible nuclear hyperfine interaction. In order to realize wafer scale graphene spintronics, utilization of …