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Full-Text Articles in Engineering
Statistical And Variational Modeling And Analysis Of Passive Integrated Photonic Devices, Norbert Dinyi Agbodo
Statistical And Variational Modeling And Analysis Of Passive Integrated Photonic Devices, Norbert Dinyi Agbodo
Legacy Theses & Dissertations (2009 - 2024)
The success of Si as a platform for photonic devices and the associated availabilityof wafer-scale, ultra-high resolution lithography for Si CMOS has helped lead to the rapid advance of Si-based integrated photonics manufacturing over the past decade. This evolution is nearing the point of integration of Si-based photonics together with Si-CMOS for compact, high speed, high bandwidth, and cost-effective devices. However, due to the sensitive nature of passive and active photonic devices, variations inherent in wafer-based fabrication processes can lead to unacceptable levels of performance variation both within a give die and across a given wafer. Fully understanding the role …
Development Of Iii-Sb Based Technologies For P-Channel Mosfet In Cmos Applications, Shailesh Kumar Madisetti
Development Of Iii-Sb Based Technologies For P-Channel Mosfet In Cmos Applications, Shailesh Kumar Madisetti
Legacy Theses & Dissertations (2009 - 2024)
The continuous scaling of silicon CMOS predicts the end of roadmap due to the difficulties such as that arise from electrostatic integrity, design complexities, and power dissipation. These fundamental and practical limitations bring the need for innovative design architectures or alternate materials with higher carrier transport than current Si based materials. New device designs such as multigate/gate-all-around architectures improve electrostatics while alternate materials like III-Vs such as III-As for electrons and III-Sbs for holes increase operational speed, lower power dissipation and thereby improve performance of the transistors due to their low effective mass and faster transport properties. Further, application of …
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Investigation Of The Threshold Voltage Shift Effect Of La2o3 On Tin/Hfo2/La2o3/Sio2/Si Stacks, Ming Di
Legacy Theses & Dissertations (2009 - 2024)
The semiconductor industry continues to scale (shrink) transistor dimensions to both increase the number of transistors per integrated circuit and their speed. One important aspect of scaling is the need to decrease the equivalent oxide thickness of the transistor gate dielectric while minimizing leakage current. Traditional thin layer SiO2 or SiOxNy films have been replaced by higher dielectric constant film stacks Here we study one example, the HfO2/La2O3/SiO2 stack. This dissertation describes an investigation of the use of La2O3 to reduce the threshold voltage of TiN/HfO2/SiO2/Si stacks (high-k/metal gate stacks). A significant aspect of this study is the determination of …