Engineering Commons^™

Research Progress Of Copper Electrodeposition Filling Mechanism In Silicon Vias, Yun-Na Sun, Yong-Jin Wu, Dong-Dong Xie, Han Cai, Yan Wang, Gui-Fu Ding

Journal of Electrochemistry

Aiming at the electroplating filling problem of deep via TSV (through silicon via) interconnection, the multi-compatible integrated manufacturing technology team at the Shanghai Jiao Tong University has completed the numerical solution of the equations and realized the numerical simulation of TSV filling mode by applying the finite element method with arbitrary Lagrange Euler algorithm. The filling mechanisms of blind vias, the butterfly filling form for the through vias and the simultaneous filling mode of vias with different aspect ratios are analyzed by simulation, contributing to the parameter optimization and sample manufacturing. The effects of electroplating current density and heat treatment …