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The Effects Of Temperature And Electron Radiation On The Electrical Properties Of Algan/Gan Heterostructure Field Effect Transistors, Jeffrey T. Moran

Theses and Dissertations

Al_xGa_1-xN/GaN Heterostructure Field Effect Transistors (HFETs) have come under increased study, in recent years, owing to their highly desirable material and electrical properties, ruggedness, and survivability even during and after exposure to extreme temperature and radiation environments. These devices or similar devices constructed of AlGaN and/or GaN materials are being researched for their potential applications in many military and space based systems. In this study, unpassivated and SiN passivated Al_0.27Ga_0.73N/GaN HFETs were subjected to electron radiation at incident energies of 0.5MeV and 1.0MeV and fluences from 5x10¹⁴ to 5x10¹⁵ [e-/cm …