Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Engineering
Manufacture And Testing Of An Activation Foil Package For Use In Afids, Warren E. Kimmel
Manufacture And Testing Of An Activation Foil Package For Use In Afids, Warren E. Kimmel
Theses and Dissertations
This study used simulation and experiment to design and test foil packets for use in the Activation Foil Integrated Detection System (AFIDS). The initial plan to activate foil packets outside with the pulse reactor at White Sands Missile Range (WSMR) was not possible due to WSMR not having safety approval to take the reactor outside. As an alternative, the concept of using liquid nitrous oxide inside a reactor to simulate large volumes of air was investigated. Simulation using the Standardized Computer Analyses for Licensing Evaluation (SCALE) program was used to select ten foils to be included in the foil packet. …
Temperature Dependent Current-Voltage Measurements Of Neutron Irradiated Al0.27Ga0.73N/Gan Modulation Doped Field Effect Transistors, Troy A. Uhlman
Temperature Dependent Current-Voltage Measurements Of Neutron Irradiated Al0.27Ga0.73N/Gan Modulation Doped Field Effect Transistors, Troy A. Uhlman
Theses and Dissertations
In this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x1016 n/sq cm demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary …