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The Effects Of Temperature And Electron Radiation On The Electrical Properties Of Algan/Gan Heterostructure Field Effect Transistors, Jeffrey T. Moran
The Effects Of Temperature And Electron Radiation On The Electrical Properties Of Algan/Gan Heterostructure Field Effect Transistors, Jeffrey T. Moran
Theses and Dissertations
AlxGa1-xN/GaN Heterostructure Field Effect Transistors (HFETs) have come under increased study, in recent years, owing to their highly desirable material and electrical properties, ruggedness, and survivability even during and after exposure to extreme temperature and radiation environments. These devices or similar devices constructed of AlGaN and/or GaN materials are being researched for their potential applications in many military and space based systems. In this study, unpassivated and SiN passivated Al0.27Ga0.73N/GaN HFETs were subjected to electron radiation at incident energies of 0.5MeV and 1.0MeV and fluences from 5x1014 to 5x1015 [e-/cm …
Capacitance-Voltage Study On The Effects Of Low Energy Electron Radiation On Al0.27Ga0.73N/Gan High Electron Mobility Transistor, Thomas D. Jarzen
Capacitance-Voltage Study On The Effects Of Low Energy Electron Radiation On Al0.27Ga0.73N/Gan High Electron Mobility Transistor, Thomas D. Jarzen
Theses and Dissertations
The effects of radiation on semiconductors are extremely important to the Department of Defense since the majority of the defense informational, navigational and communications systems are now satellite-based. Due to the high radiation tolerance of gallium nitride and a plethora of high temperature, high power and high frequency applications, the prospect that gallium nitride based devices will become key components in a multitude of military satellite-based systems is highly probable. AlGaN/GaN HEMTs were irradiated at low temperature (~80 K) by 0.45 – 0.8 MeV electrons up to fluences of 1×1015 e-/cm2. Following irradiation, low temperature capacitance-voltage measurements …
Temperature Dependent Current-Voltage Measurements Of Neutron Irradiated Al0.27Ga0.73N/Gan Modulation Doped Field Effect Transistors, Troy A. Uhlman
Temperature Dependent Current-Voltage Measurements Of Neutron Irradiated Al0.27Ga0.73N/Gan Modulation Doped Field Effect Transistors, Troy A. Uhlman
Theses and Dissertations
In this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x1016 n/sq cm demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary …
An Analysis Of The Effects Of Low Energy Electron Radiation Of AlXGa1-XN/Gan Modulation-Doped Field-Effect Transistors, James M. Sattler
An Analysis Of The Effects Of Low Energy Electron Radiation Of AlXGa1-XN/Gan Modulation-Doped Field-Effect Transistors, James M. Sattler
Theses and Dissertations
The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*1016 e/cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements …