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Investigations Of Point Defects In Kh2Po4 Crystals Using Ab Initio Quantum Methods, Tabitha E. R. Dodson
Investigations Of Point Defects In Kh2Po4 Crystals Using Ab Initio Quantum Methods, Tabitha E. R. Dodson
Theses and Dissertations
Potassium dihydrogen phosphate (KH2PO4, or commonly called KDP) crystals can be grown to large sizes and are used for many important devices (fast optical switches, frequency conversion, polarization rotation) for high powered lasers. The nonlinear optical material has a wide intrinsic transparency range. Intrinsic point defects are responsible for several short-lived absorption bands in the visible and ultraviolet regions that affect high-power pulsed laser propagation. The primary intrinsic defects have been experimentally detected in KDP using electron paramagnetic resonance (EPR) experiments. The defect models established thus far include (i) self-trapped holes, (ii) oxygen vacancies, and (iii) …
Electron Paramagnetic Resonance Spectroscopy And Hall Effect Studies Of The Effects Of Low Energy Electron Energy On Gallium Nitride (Gan), Kevin D. Greene
Electron Paramagnetic Resonance Spectroscopy And Hall Effect Studies Of The Effects Of Low Energy Electron Energy On Gallium Nitride (Gan), Kevin D. Greene
Theses and Dissertations
The nature of native donors in GaN, types and interactions of radiation-induced defects, and damage creation coefficients for 1.0 MeV electron irradiation have been ascertained by the concerted application of electron paramagnetic resonance spectroscopy and Hall effect measurements to virgin and electron-irradiated GaN epilayers. Samples produced via molecular beam epitaxy and hydride vapor phase epitaxy, both silicon doped and nominally undoped, were subjected to Van de Graff generator produced monoenergtic electron beams with total fluences of 1016- 1018 electrons/cm2. Nitrogen vacancies are rejected as a possible cause of n-type conductivity in nominally undoped GaN due …