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Neutron Displacement Damage In Germanium Tin Photodiodes, Nathan J. Gale

Theses and Dissertations

GeSn is a promising material for photodiodes in the near-to-mid infrared (IR) spectrum because of new growth methods that enable integration with complementary metal oxide semiconductor (CMOS) technology. While natural germanium has a threshold wavelength of 1800 nm, 6.9 Sn content extends the threshold wavelength to 2700 nm based on a Sn content dependent bandgap. Also, unlike other semiconductors that require liquid nitrogen cooling to act as an IR sensor, GeSn can be operated at room temperature, enabling a wide variety of applications. In this study, photodiodes ranging from 0 to 6.9 tin content were subjected to 1 MeV (Si) …