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Articles 1 - 5 of 5
Full-Text Articles in Engineering
Molecular Dynamics Study Of Diffusion Of O2 Penetrates In Uncrosslinked Polydimethysiloxane (Pdms), Crosslinked Pdms, And Pdms-Based Nanocomposites, Varun Ullal
Graduate Theses and Dissertations
Molecular dynamics simulations are used to study diffusion of O2 molecules in pure polydimethysiloxane (PDMS), crosslinked PDMS, and PDMS-based nanocomposites. The PDMS chains and penetrates are modeled using a hybrid interatomic potential which treats the Si-O atoms along the chain backbone explicitly while coarse-graining the methyl side groups and penetrates. By tracking the diffusion of penetrates in the system and subsequently computing their mean-squared displacement, diffusion coefficients are obtained. In pure PDMS models of varying molecular weight, diffusivity of the O22 penetrates is found to have an inverse relationship with chain length. Simulation models with longer chains …
Plasma-Assisted Molecular Beam Epitaxial Growth Of Indium Nitride For Future Device Fabrication, Steven Paul Minor
Plasma-Assisted Molecular Beam Epitaxial Growth Of Indium Nitride For Future Device Fabrication, Steven Paul Minor
Graduate Theses and Dissertations
The need for energy conservation has heightened the search for new materials that can reduce energy consumption or produce energy by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range (0.7-6.2 eV) which spans the entire visible spectrum and encompasses a large portion of the available solar spectrum. Of the three root III-nitride semiconductors, AlN, GaN, and InN, InN has only recently become attainable epitaxially with qualities good enough …
Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock
Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock
Graduate Theses and Dissertations
Graphene, what some are terming the "new silicon", has the possibility of revolutionizing technology through nanoscale design processes. Fabrication of graphene for device processing is limited largely by the temperatures used in conventional deposition. High temperatures are detrimental to device design where many different materials may be present. For this reason, graphene synthesis at low temperatures using plasma-enhanced chemical vapor deposition is the subject of much research. In this thesis, a tool for ultra-high vacuum plasma-enhanced chemical vapor deposition (UHV-PECVD) and accompanying subsystems, such as control systems and alarms, are designed and implemented to be used in future graphene growths. …
High Frequency Characterization Of Carbon Nanotube Networks For Device Applications, Emmanuel Decrossas
High Frequency Characterization Of Carbon Nanotube Networks For Device Applications, Emmanuel Decrossas
Graduate Theses and Dissertations
This work includes the microwave characterization of carbon nanotubes (CNTs) to design new CNTs-based high frequency components. A novel developed method to extract the electrical properties over a broad microwave frequency band from 10 MHz to 50 GHz of carbon nanotubes (CNTs) in a powder form is performed. The measured scattering parameters (S-parameters) with a performance network analyzer are compared to the simulated one obtained from an in-house computed mode matching technique (MMT). An optimized first order gradient method iteratively changes the unknown complex permittivity parameters to map the simulated S-parameters with the measured one until convergence criteria are satisfied. …
Fabrication Of Vertical Silicon Nanowires Through Metal Assisted Deposition, Matthew Garett Young
Fabrication Of Vertical Silicon Nanowires Through Metal Assisted Deposition, Matthew Garett Young
Graduate Theses and Dissertations
Controlled and ordered growth of Si nanowires through a low temperature fabrication method compatible with CMOS processing lines is a highly desirable replacement to future electronic fabrication technologies as well as a candidate for a low cost route to inexpensive photovoltaics. This stems from the fact that traditional CMOS based electronics are hitting physical barriers that are slowing the Moore's Law trend as well as the demand for an inexpensive solar cell technology that can obtain grid parity. A fractional factorial growth study is presented that compares the growth of Au and Al catalyzed Si nanowires at temperatures ranging from …