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Full-Text Articles in Engineering
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Legacy Theses & Dissertations (2009 - 2024)
The introduction of low dielectric constant materials within the integrated circuit (IC) chip technology industry was a concerted effort to decrease the resistance-capacitance (RC) time delay inherent within the dielectric materials used as insulators. This stems from a demand for greater device density per IC chip and decreased feature sizes but is fast becoming a reliability issue. Concomitant with the demand for decreased feature sizes, also in adherence with Moore’s Law (which states that the number of devices on a die doubles every two years), is a reduction in device speed and performance due to device intra-level interconnection signal delays. …
Statistical And Variational Modeling And Analysis Of Passive Integrated Photonic Devices, Norbert Dinyi Agbodo
Statistical And Variational Modeling And Analysis Of Passive Integrated Photonic Devices, Norbert Dinyi Agbodo
Legacy Theses & Dissertations (2009 - 2024)
The success of Si as a platform for photonic devices and the associated availabilityof wafer-scale, ultra-high resolution lithography for Si CMOS has helped lead to the rapid advance of Si-based integrated photonics manufacturing over the past decade. This evolution is nearing the point of integration of Si-based photonics together with Si-CMOS for compact, high speed, high bandwidth, and cost-effective devices. However, due to the sensitive nature of passive and active photonic devices, variations inherent in wafer-based fabrication processes can lead to unacceptable levels of performance variation both within a give die and across a given wafer. Fully understanding the role …
Mechanical Analysis Of A Heterogeneously Integrated Silicon Photonic Interposer, Erica Charlene Graham
Mechanical Analysis Of A Heterogeneously Integrated Silicon Photonic Interposer, Erica Charlene Graham
Legacy Theses & Dissertations (2009 - 2024)
Overcoming the bandwidth bottleneck in conventional interconnects necessitates transitioning to alternative scaling paradigms. Silicon (Si) photonics is considered a disruptive technology, capable of meeting the growing demands for higher bandwidth, low latency, and power efficiency. By leveraging the intrinsic properties of optical signals and manufacturing compatibility of Si, the co-integration of Si photonics and complementary-metal-oxide-semiconductor (CMOS) circuitry leading to terabit data speeds for next generation data communication can be realized. Heterogeneously integrating Si photonic functionality with well-established CMOS technology in an Si photonic interposer architecture simultaneously provides independent optimization as well as close integration of both technologies in one platform. …
Dynamic Through-Silicon Via Clustering In 3d Ic Floorplanning For Early Performance Optimization, Sucheta Mohapatra
Dynamic Through-Silicon Via Clustering In 3d Ic Floorplanning For Early Performance Optimization, Sucheta Mohapatra
Dissertations and Theses
Through-silicon via (TSV)-based three-dimensional integrated circuits (3D ICs) are expected to be the breakthrough technology for keeping up with the scaling trends of Moore's law, while also offering the unique opportunity for functional diversification through heterogenous integration. TSVs are vertical metal interconnects enabling communication across stacked and thinned dies. The dramatic reduction in global wirelength and chip footprint in 3DICs, directly improves delay, device density, bandwidth and routing congestion. Even with the current maturation of TSV process, the roadmap for industry adoption of 3DICs remains largely uncertain due to lack of standardized 3D tools capable of handling the sheer complexity …
Photonic Grating Coupler Designs For Optical Benching, Eng Wen Ong
Photonic Grating Coupler Designs For Optical Benching, Eng Wen Ong
Legacy Theses & Dissertations (2009 - 2024)
Background: Silicon Photonics has been rapidly developing as a field. The primary reason for this is its lower operating costs and faster switching rates for use in big data centres. Instead of microns-wide copper lines to transmit signals, silicon photonic chips use waveguides, usually of silicon or silicon nitride. Photonic signals bypass the issues of resistive-capacitance lag (RC-lag) and resistive-heating encountered by copper lines. Additionally, a single waveguide may transmit multiple signals along different carrier wavelengths.
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Legacy Theses & Dissertations (2009 - 2024)
Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implementation of these materials. The accuracy with which one can assess this reliability is currently a …
Texture And Microstructure Of Ipvd Copper Manganese Seed In 1 Μm & 70 Nm Wide Damascene Trenches, Robert Stuart Brown
Texture And Microstructure Of Ipvd Copper Manganese Seed In 1 Μm & 70 Nm Wide Damascene Trenches, Robert Stuart Brown
Legacy Theses & Dissertations (2009 - 2024)
This thesis describes the grain texture and microstructure of Ionized Physical Vapor Deposition (iPVD) Copper Manganese seed in 1 µm and 70 nm wide damascene trenches. Using Transmission Electron Microscopy (TEM) imaging and diffraction pattern analysis, the grain size and general orientation of the grains were determined. It was found that the 1 µm wide trenches contained larger grains and more texture than that of the 70 nm wide trenches. While this thesis builds upon previous work by Brendan O’Brien in the Dunn group, one significantly different finding will be presented regarding the structure on the sidewall of the trenches. …
Plasmonic Enhancement Of The Ellipsometric Measurement Of Thin Metal Lines, Samuel O'Mullane
Plasmonic Enhancement Of The Ellipsometric Measurement Of Thin Metal Lines, Samuel O'Mullane
Legacy Theses & Dissertations (2009 - 2024)
In semiconductor manufacturing, defect analysis and process control are extremely important for optimal device performance and yield enhancement. One in-line tool used for quick optical characterization is the ellipsometer. Because it is nondestructive and largely automated, ellipsometers have become key tools in this process. Scatterometry based optical critical dimension (OCD) analysis is the full optical modeling of ellipsometric measurements using regression-based structures. Specifically for metallic gratings, OCD has a couple of challenges. First, the sensitivity to changes in the width of the metal lines is decreasing for smaller widths. Second, the main scatterometry spectral simulation method (rigorous coupled wave analysis, …
The Influence Of Impurities And Metallic Capping Layers On The Microstructure Of Copper Interconnects, Michael Rizzolo
The Influence Of Impurities And Metallic Capping Layers On The Microstructure Of Copper Interconnects, Michael Rizzolo
Legacy Theses & Dissertations (2009 - 2024)
As copper interconnects have scaled to ever smaller dimensions on semiconductor devices, the microstructure has become increasingly detrimental for performance and reliability. Small grains persist in interconnects despite annealing at high temperatures, leading to higher line resistance and more frequent electromigration-induced failures. Conventionally, it was believed that impurities from the electrodeposition pinned grain growth, but limitations in analytical techniques meant the effect was inferred rather than observed.
Characterization Of Extreme Ultraviolet Lithography Photoresists Using Advanced Metrology And Fitting Techniques, Genevieve Kane
Characterization Of Extreme Ultraviolet Lithography Photoresists Using Advanced Metrology And Fitting Techniques, Genevieve Kane
Legacy Theses & Dissertations (2009 - 2024)
As extreme ultraviolet lithography (EUVL) prepares to be incorporated into high volume manufacturing, many challenges must be addressed. Among these challenges, a need for photoresist improvement exists. The work described here will look into some of the problems and challenges facing EUV resists, in particular out-of-band (OOB) wavelengths of light and their interaction with photoresists. Studies have been completed on the effect of out-of-band light on photoresists [1]-[3]. It is imperative that solutions to suppress the deep ultraviolet (DUV) OOB light be incorporated into next generation EUV production tools due to concerns of decreased performance of lithography, and an increase …
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Effects Of Radiation-Induced Carbon Contamination On The Printing Performance Of Extreme Ultraviolet Masks, Yu-Jen Fan
Legacy Theses & Dissertations (2009 - 2024)
This dissertation investigates one of the remaining issues for extreme ultraviolet (EUV) lithography, the effects of radiation induced carbon contamination on the printing performance of patterned EUV masks. The impact of carbon contamination on EUV masks is significant due to the throughput loss and potential effects on imaging performance, and occurs when multilayer surfaces are exposed to EUV radiation with residual carbonaceous species present. Current carbon contamination research is primarily focused on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on …
Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough
Applications Of Raman Spectroscopy For Silicon Stress Characterization In Integrated Circuits, Colin Mcdonough
Legacy Theses & Dissertations (2009 - 2024)
The introduction of mechanical stress in Si-based integrated circuits (ICs), whether desired or undesired, is intrinsic to IC fabrication. The origins are diverse and result from the numerous materials, geometries, and processes involved in fabrication. These stresses can lead to such effects as delamination, void formation and migration, and fracture, and can significantly affect device performance. As a result, stress development is a major concern for reliability, process control, and device design. It is necessary to investigate and characterize the origins and levels of the induced stresses. A more complete fundamental understanding of the evolution of stress in ICs and …
Nanoabrasives Retention And Removal Mechanisms In Polyurethane Pads For Copper Cmp, Iftikhar Ul-Hasan
Nanoabrasives Retention And Removal Mechanisms In Polyurethane Pads For Copper Cmp, Iftikhar Ul-Hasan
Legacy Theses & Dissertations (2009 - 2024)
The continued reduction in integrated circuit (IC) feature size requires similar reductions in surface defectivity. A key source of surface defects in IC fabrication processes stems from nanoabrasives used in chemical-mechanical planarization (CMP) processing. During CMP processing, polished surfaces are more vulnerable to defects including scratching, nanoabrasive particle adhesion and nanoabrasive agglomerate adhesion. The removal of these nano-sized particles is a priority for the IC fabrication industry and is reflected in the 2008 ITRS defect budget. However, there is insufficient technical understanding regarding the retention of residual nanoabrasives on the surfaces of the CMP pad following a CMP process and …