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Device Engineering Of Algan/Gan Hemts For Applications In Power-Electronic And Sensing, Isra Mahaboob
Device Engineering Of Algan/Gan Hemts For Applications In Power-Electronic And Sensing, Isra Mahaboob
Legacy Theses & Dissertations (2009 - 2024)
The research work presented in this Ph.D. thesis focuses on the engineering of AlGaN/GaN high electron mobility transistors (HEMTs) for the development of future device technology in power electronic and sensing applications.