Open Access. Powered by Scholars. Published by Universities.®
Nanoscience and Nanotechnology
Charge-based capacitance measurement (CBCM); nanowire MOSFETs; self-consistent C-V modeling; subfemtofarad-capacitance measurement
Articles 1 - 1 of 1
Full-Text Articles in Engineering
Characterization And Modeling Of Subfemtofarad Nanowire Capacitance Using The Cbcm Technique, Hui Zhao, Raseong Kim, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck, Fa-Jun Ma, Subhash Rustagi, Ganesh S. Samudra, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong
Characterization And Modeling Of Subfemtofarad Nanowire Capacitance Using The Cbcm Technique, Hui Zhao, Raseong Kim, Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck, Fa-Jun Ma, Subhash Rustagi, Ganesh S. Samudra, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong
Gerhard Klimeck
The experimental characterization of gate capacitance in nanoscale devices is challenging. We report an application of the charge-based capacitance measurement (CBCM) technique to measure the gate capacitance of a single-channel nanowire transistor. The measurement results are validated by 3-D electrostatic computations for parasitic estimation and 2-D self-consistent sp(3)s*d5 tight-binding computations for intrinsic gate capacitance calculations. The device simulation domains were constructed based on SEM and TEM images of the experimental device. The carefully designed CBCM technique thus emerges as a useful technique for measuring the capacitance and characterizing the transport in nanoscale devices.