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Mueller Based Scatterometry And Optical Characterization Of Semiconductor Materials, Gangadhara Raja Muthinti
Mueller Based Scatterometry And Optical Characterization Of Semiconductor Materials, Gangadhara Raja Muthinti
Legacy Theses & Dissertations (2009 - 2024)
Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete …
Understanding Defect Interactions In Si Ultra-Shallow P-N Junctions Formed By Very Low Energy Boron Implantation, Lakshmanan H. Vanamurthy
Understanding Defect Interactions In Si Ultra-Shallow P-N Junctions Formed By Very Low Energy Boron Implantation, Lakshmanan H. Vanamurthy
Legacy Theses & Dissertations (2009 - 2024)
One of the biggest challenges in the scaling of CMOS devices is the formation of a highly activated, abrupt, defect free Source drain extension (SDE) region. This is especially difficult with p-FET's because of the (1) Boron diffusion co-efficient enhancement from Transient enhanced diffusion (TED) and (2) low solid solubility of