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Heterogeneous Graphene Nanoribbon-Cmos Multi-State Volatile Random Access Memory Fabric, Santosh Khasanvis

Masters Theses 1911 - February 2014

CMOS SRAM area scaling is slowing down due to several challenges faced by transistors at nanoscale such as increased leakage. This calls for new concepts and technologies to overcome CMOS scaling limitations. In this thesis, we propose a multi-state memory to store multiple bits in a single cell, enabled by graphene and graphene nanoribbon crossbar devices (xGNR). This could provide a new dimension for scaling. We present a new multi-state volatile memory fabric called Graphene Nanoribbon Tunneling Random Access Memory (GNTRAM) featuring a heterogeneous integration between graphene and CMOS. A latch based on the xGNR devices is used as the …