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Electrochemical Characterization Of Copper Deposited On Plasma And Thermally Modified Titanium Surfaces, K. S. Teng, J. L. Delplancke, Jiangfan Zhang, T. J. O'Keefe

Electrical and Computer Engineering Faculty Research & Creative Works

Thin oxide films were grown at temperatures from 373 to 1073 K in plasma and in air on commercially pure titanium substrates. It was determined that the color, thickness, composition, phase, and polarization behavior in a copper electrolyte varied with operating conditions: temperature, oxygen partial pressure, and plasma composition. High-temperature and high oxygen partial pressure plasma produced a thick oxide film. The surface film structure transformed from TiO2 (anatase) to TiO2 (rutile) at a temperature of 600 °C. A lower oxide of the form TinO2n-1, such as Ti2O3 (which may be porous) or possibly Ti3O5, was formed on a thermally …