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Resistive Switching Of Tin Dioxide (Sno2) For Memristor Applications, Sergio Fabian Almeida
Resistive Switching Of Tin Dioxide (Sno2) For Memristor Applications, Sergio Fabian Almeida
Open Access Theses & Dissertations
In the last decades new electrical devices have been investigated in order to overcome problems caused by integrated circuit shrinking. Within these devices there is one that has attracted much attention due to its high scalability and simple structure. This device was proposed theoretically by Leon Chua in 1971 who gave it the name of "Memristor". In the recent years thin films structures composed of a metal/oxide/metal (MOM) stack have been linked to this new device, also known as "Resistive switching". There are several applications for the memristor; one of the most important is for resistive random access memory (ReRAM) …