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Full-Text Articles in Engineering
Semiconductor Thermal Neutron Detector, Toru Aoki, Aki Miyake, Takayuki Nakano, Akifumi Koike, Hisashi Morii, Hidenori Mimura
Semiconductor Thermal Neutron Detector, Toru Aoki, Aki Miyake, Takayuki Nakano, Akifumi Koike, Hisashi Morii, Hidenori Mimura
Makara Journal of Technology
The CdTe and GaN detector with a Gd converter have been developed and investigated as a neutron detector for neutron imaging. The fabricated Gd/CdTe detector with the 25 mm thick Gd was designed on the basis of simulation results of thermal neutron detection efficiency and spatial resolution. The Gd/CdTe detector shows the detection of neutron capture gamma ray emission in the 155Gd(n, g)156Gd, 157Gd(n, g)158Gd and 113Cd(n, g)114Cd reactions and characteristic X-ray emissions due to conversion-electrons generated inside the Gd film. The observed efficient thermal neutron detection with the Gd/CdTe detector shows its promise in neutron radiography application. Moreover, a …
Constructing And Optimizing A Single Wafer Solar Cell Array In The Microfabrication Lab At California Polytechnic State University At San Luis Obispo, Rod Marstell
Master's Theses
CONSTRUCTING AND OPTIMIZING A SINGLE WAFER SOLAR CELL ARRAY IN THE MICROFABRICATION LAB AT CALIFORNIA POLYTECHNIC STATE UNIVERSITY AT SAN LUIS OBISPO
Solar cells are more and more becoming a significant source of energy in the world today. They are used to power entire buildings as well as small devices and everything in between, and are utilized all around the world. Smaller solar devices, such as hearing aid battery chargers, cost a lot of money relative to the monetary wealth in third-world countries. For this purpose, a less expensive, more efficient solar cell array should be developed.
This study contains …
New Application For Indium Gallium Zinc Oxide Thin Film Transistors: A Fully Integrated Active Matrix Electrowetting Microfluidic Platform, Jiyong Noh
Doctoral Dissertations
The characterization and fabrication of active matrix TFTs [Thin Film Transistors] have been studied for applying an addressable microfluidic electrowetting channel device. The a-IGZO [Amorphous Indium Gallium Zinc Oxide] is used for electronic switching device to control the microfluidic device because of its high mobility, transparency, and easy to fabrication. The purpose of this dissertation is to optimize each IGZO TFT process including the optimization of a-IGZO properties to achieve robust device for application. To drive the IGZO TFTs, the channel resistance of IGZO layer and contact resistance between IGZO layer and source/drain (S/D) electrode are discussed in this dissertation. …
Fabrication And Characterization Of Si(1-X)Ge(X) Semiconductor Alloy For Sensor Applications, Daniel Aaron Schaeffer
Fabrication And Characterization Of Si(1-X)Ge(X) Semiconductor Alloy For Sensor Applications, Daniel Aaron Schaeffer
Masters Theses
Si1-xGex [Si(1-x)Ge(x)] semiconductor alloys have emerged as materials with many important applications in the electronic industry due to its tunable electronic, optical, and physical properties. It has been studied and analyzed for the fabrication of high-speed micro electronics (e.g., SiGe heterojunction bipolar transistors (HBT) and high electron mobility field effect transistors) and thermo-photovoltaics (e.g., photodetectors, solar cells, thermoelectric power generators and temperature sensors). Other applications of Si1-xGex include tunable neutron and x-ray monochromators and γ- ray [gamma-ray] detectors. In these applications, the Si1-xGex alloy is generally used in the form of …
Carbon Nitride And Conjugated Polymer Composite Materials, Josh Byers
Carbon Nitride And Conjugated Polymer Composite Materials, Josh Byers
Electronic Thesis and Dissertation Repository
The semiconductor and photovoltaic properties of carbon nitride (CNx) thin films prepared using a reactive magnetron sputtering technique were investigated both individually and as composites with the organic conjugated polymers polybithiophene (PBT) and poly(3-hextlthiophene) (P3HT). At low nitrogen content, the film structure was dominated by graphitic sp2 percolation networks, whereas at higher nitrogen contents CNx films started to demonstrate semiconductor properties, as evidenced by the occurrence of photoconductivity and the development of a space charge region. When CNx was deposited onto a PBT substrate, it was found to function as an acceptor material improving the photocurrent generation both in …