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Full-Text Articles in Engineering
Photodetectors And Photovoltaic Devices Based On Semiconductor Nanomaterials, Jiang Wu
Photodetectors And Photovoltaic Devices Based On Semiconductor Nanomaterials, Jiang Wu
Graduate Theses and Dissertations
Photodetectors based various nanostructures and plasmon enhanced solar cells are investigated in this dissertation. The motivation of the dissertation rise is driven by urgent need of both high efficiency photodetectors and solar cells.
First, quantum dot infrared photodetectors have been intensely investigated due to their promise in high performance photodetectors. However, the strain-driven growth of quantum dots has hindered the progress of quantum dot photodetectors. The presence of strain in the device presents complexity in designing as well as defects. Therefore, in this project, new designs of quantum dot photodetector structures are presented to improve the control over detection wavelength. …
Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff
Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff
Physics - All Scholarship
We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n2+nλ/h (n – film refractive index, λ – optical wavelength, h …
On Developing Novel Energy-Relates Nanostructured Materials By Atomic Layer Deposition, Xiangbo Meng
On Developing Novel Energy-Relates Nanostructured Materials By Atomic Layer Deposition, Xiangbo Meng
Electronic Thesis and Dissertation Repository
ABSTRACT
This thesis presents the fabrication of a series of novel nanostructured materials using atomic layer deposition (ALD). In contrast to traditional methods including chemical vapor deposition (CVD), physical vapor deposition (PVD), and solution-based processes, ALD benefits the synthesis processes of nanostructures with many unrivalled advantages such as atomic-scale control, low temperature, excellent uniformity and conformality. Depending on the employed precursors, substrates, and temperatures, the ALD processes exhibited different characteristics. In particular, ALD has capabilities in fine-tuning compositions and structural phases. In return, the synthesis and the resultant nanostructured materials show many novelties.
This thesis covers ALD processes of four …
Scanning Capacitance Spectroscopy On N+-P Asymmetrical Junctions In Multicrystalline Si Solar Cells, Chun-Sheng Jiang, Jennifer T. Heath, Helio R. Moutinho, Mowafak M. Al-Jassim
Scanning Capacitance Spectroscopy On N+-P Asymmetrical Junctions In Multicrystalline Si Solar Cells, Chun-Sheng Jiang, Jennifer T. Heath, Helio R. Moutinho, Mowafak M. Al-Jassim
Faculty Publications
We report on a scanning capacitance spectroscopy (SCS) study on the n+-p junction of multicrystalline silicon solar cells. We found that the spectra taken at space intervals of ∼10 nm exhibit characteristic features that depend strongly on the location relative to the junction. The capacitance-voltage spectra exhibit a local minimum capacitance value at the electrical junction, which allows the junction to be identified with ∼10-nm resolution. The spectra also show complicated transitions from the junction to the n-region with two local capacitance minima on the capacitance-voltage curves; similar spectra to that have not been previously reported in …
Development Of High Band Gap Absorber And Buffer Materials For Thin Film Solar Cell Applications, Daniel Dwyer
Development Of High Band Gap Absorber And Buffer Materials For Thin Film Solar Cell Applications, Daniel Dwyer
Legacy Theses & Dissertations (2009 - 2024)
CuInGaSe2 (CIGS) device efficiencies are the highest of the thin film absorber materials (vs. CdTe, α-Si, CuInSe2). However, the band gap of the highest efficiency CIGS cells deviates from the expected ideal value predicted by models. Widening the band gap to the theoretically ideal value is one way to increase cell efficiencies. Widening the band gap can be accomplished in two ways; by finding a solution to the Ga-related defects which limit the open circuit voltage at high Ga ratios, or by utilizing different elemental combinations to form an alternative high band gap photoactive Cu-chalcopyrite (which includes …