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Full-Text Articles in Engineering

Electrodeposition Of Al On Magnesium Alloy In Ionic Liquid, Tsai Wen-Ta, Shu-You Chen, Mu-Huan Zhuang, Chang Jeng-Kuei, Yi-Wen Sun May 2009

Electrodeposition Of Al On Magnesium Alloy In Ionic Liquid, Tsai Wen-Ta, Shu-You Chen, Mu-Huan Zhuang, Chang Jeng-Kuei, Yi-Wen Sun

Journal of Electrochemistry

Electrodeposition of a metallic aluminum on a magnesium alloy in acidic aluminum chloride-1-ethyl-3-methylimidazolium chloride ionic liquids(AlCl3-EMIC) was investigated.The effects of current density and AlCl3 content in the ionic liquid on the electrodeposition behavior were studied.The results showed that aluminum could be successfully electrodeposited on the AZ91D substrate.At-0.2 V,the ionic liquid containing 60 m/o AlCl3 was optimum for Al electrodeposition.The current efficiency was higher if electrodeposition was performed at a lower applied current density.The existence of Al coating could caused a substantial increase in open circuit potential,reducing the susceptibility of Mg alloy to corrosion.The results of electrochemical impedance spectroscopy showed that …


Shielding Effectiveness Of Superalloy, Aluminum, And Mumetal Shielding Tapes, Cindy Suit Cheung Apr 2009

Shielding Effectiveness Of Superalloy, Aluminum, And Mumetal Shielding Tapes, Cindy Suit Cheung

Master's Theses

Using MIL-HDBK-419A, MATLAB and Nomographs, Shielding Effectiveness for the Magnetic Field, Electric Field, and Plane Wave were calculated over a frequency range from 10 Hz to 1 GHz. The three shielding tapes used included superalloy, aluminum, and mumetal. Calculations for Shielding Effectiveness involve the computation of Absorption Loss, Reflection Loss, and Re-Reflection Correction Factor. From the outcome of the calculations, it was suitable to conclude that all three metals fulfill the 40 dB Shielding Effectiveness requirements for SGEMP fields for frequencies greater or equal to 1 MHz. Accordingly, all three shielding tapes provide at least 40 dB of shielding to …


Metal Induced Crystallization Of Silicon Thin Films, Sandeep Kumar Raju Sangaraju Jan 2009

Metal Induced Crystallization Of Silicon Thin Films, Sandeep Kumar Raju Sangaraju

UNLV Theses, Dissertations, Professional Papers, and Capstones

Low temperature crystallization of thin film silicon is important for many industrial applications including flat panel displays and silicon thin film solar cells. Unfortunately this remains a major challenge since crystallization temperature of silicon is above 1,000 degrees Celsius, thus limiting to substrates that can tolerate high temperatures. The inability to deposit crystalline thin films on glass substrates is the reason why flat panel display industry uses amorphous silicon for LCD active matrix displays. Thus the ability to deposit crystallized thin film silicon at low temperatures will have significant impact on thin film silicon applications. It has been observed that …