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Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Tridimethylaminosilane, Xin Lin
Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Tridimethylaminosilane, Xin Lin
Theses
In this study amorphous stoichiometric silicon nitride films were synthesized by low pressure chemical vapor deposition (LPCVD) using tri(dimethylamino) silane (TDMAS) and ammonia (NH3). The growth kinetics were determined as a function of temperature in the range of 650 - 900 °C, total pressure in the range of 0.15 - 0.60 Torr, and NH3/TDMAS flow ratio in the range of 0 - 10. At constant condition of pressure (0.5 Torr), TDMSA flow rate (10 sccm) and NH3 flow rate (100 sccm), the deposition rate of as-deposited silicon nitride films was found to follow an Arrehnius …