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Full-Text Articles in Engineering

Quantitative, Photocurrent Multidimensional Coherent Spectroscopy, Adam Halaoui Nov 2023

Quantitative, Photocurrent Multidimensional Coherent Spectroscopy, Adam Halaoui

Electronic Theses and Dissertations

Multidimensional coherent spectroscopy (MDCS) is a quickly growing field that has a lot of advantages over more conventional forms of spectroscopy. These advantages all come from the fact that MDCS allows us to get time resolved correlated emission and absorption spectra using very precisely chosen interactions between the density matrix and the excitation laser. MDCS spectra gives the researcher a lot of information that can be extracted purely through qualitative analysis. This is possible because state couplings are entirely separated on the spectra, and once we know how to read the data, we can see how carriers transport in the …


Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers May 2023

Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers

Physics Undergraduate Honors Theses

Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …


Tailoring Interfaces And Composition For Stable And Efficient Perovskite Solar Cells, Hamza Javaid Feb 2022

Tailoring Interfaces And Composition For Stable And Efficient Perovskite Solar Cells, Hamza Javaid

Doctoral Dissertations

Metal halide perovskite solar cells (PSCs) have revolutionized the field of thin film photovoltaics. Within a decade, the power conversion efficiencies (PCEs) have increased at a phenomenal rate, rising from 3.8% to more than 25% in single-junction devices, moving them ahead of the current silicon-based technology. The high efficiencies of perovskite solar cells (PSCs) and their other unique properties arise from a combination of organic and inorganic components and electronic-ionic conduction, making them excellent candidates for a plethora of applications. However, PSCs face a significant—and ironic—roadblock to commercialization: these light-harvesting materials degrade under sunlight—the very condition they would need …


Study Of Sac Solder Interconnect Parameters In Microelectronic Semiconductor Packaging And Their Effects On Electromigration Failure Mechanisms, Allison Theresa Osmanson Dec 2021

Study Of Sac Solder Interconnect Parameters In Microelectronic Semiconductor Packaging And Their Effects On Electromigration Failure Mechanisms, Allison Theresa Osmanson

Material Science and Engineering Dissertations

As the shrinkage of electronic devices becomes more appealing, so do their high capacity and efficiency. This demand for ever-shrinking sizes of electronic devices follows the trend predicted by Moore’s Law. To achieve smaller devices, reduced sizes of solder joints, Cu traces, Cu pads, and other components in packages are implemented with tighter tolerances for geometries and layouts. With each incremental change in dimension or material, new reliability challenges emerge. Electromigration (EM), the directional diffusion of atoms with the flow of electrons, has been an inevitable reliability concern for microelectronic device packaging. It is one common failure mechanism in wafer-level …


Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu May 2021

Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu

Graduate Theses and Dissertations

Germanium-tin alloys with Sn compositions higher than 8 at. % to 10 at. % have recently attracted significant interest as a group IV semiconductor that is ideal for active photonics on a Si substrate. The interest is due to the fact that while at a few percent of Sn, GeSn is an indirect bandgap semiconductor, at about 8 to 10 at. % Sn, GeSn transitions to a direct bandgap semiconductor. This is at first surprising since the solid solubility of Sn in Ge under equilibrium growth conditions is limited to only about 1 at. %. However, under non-equilibrium growth conditions, …


Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran May 2021

Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran

Graduate Theses and Dissertations

Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …


Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis Feb 2020

Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis

Dissertations, Theses, and Capstone Projects

In this thesis, we discuss the growth procedure and the characterization results obtained for epitaxially grown submonolayer type-II quantum dot superlattices made of II-VI semiconductors. We have investigated the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots and the use of (Zn)CdTe/ZnCdSe QDs for intermediate band solar cell (IBSC). Samples with a higher quantum dot density exhibit longer electron spin lifetimes, up to ~1 ns at low temperatures. Tellurium isoelectronic centers, which form in the ZnSe spacer regions as a result of the growth conditions, were also probed. A new growth sequence for type-II (Zn)CdTe/ZnCdSe (QDs) was …


Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip May 2019

Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip

Dissertations

Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …


Synthesis Of Cadmium Arsenide Semiconductor Nanoparticles, Superatomic Silver Clusters, And Silver Coordination Polymers, Sarthak Jashubhai Patel Jan 2019

Synthesis Of Cadmium Arsenide Semiconductor Nanoparticles, Superatomic Silver Clusters, And Silver Coordination Polymers, Sarthak Jashubhai Patel

Legacy Theses & Dissertations (2009 - 2024)

Nanomaterials have chemical, electronic, optical, and other properties distinct from their bulk counterparts. However, the atom-precise synthesis of these materials remains a challenge, leaving open many scientific questions regarding the size regime between nanoparticulate (quantum confined) and bulk character. In this work, efforts toward the synthesis of nanoparticulate and atom-precise metal and semimetal materials are described. The synthesis of II-V semiconductor Cd3As2 having a near-zero bandgap is discussed. Analysis by UV-Vis absorption spectroscopy and powder X-ray diffraction indicate the formation of material with unexpected crystallinity and absorption properties The interaction between the molecular source of As and the solvent was …


Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick Jan 2018

Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick

Theses and Dissertations (Comprehensive)

Materials at the nanoscale have different chemical, structural, and optoelectrical properties compared to their bulk counterparts. As a result, such materials, called nanomaterials, exhibit observable differences in certain physical phenomena. One such resulting phenomenon called the piezoelectric effect has played a crucial role in miniature self-powering electronic devices called nanogenerators which are fabricated by using nanostructures, such as nanowires, nanorods, and nanofilms. These devices are capable of harvesting electrical energy by inducing mechanical strain on the individual nanostructures. Electrical energy created in this manner does not have environmental limitations. In this thesis, important coupled effects, such as the nonlinear piezoelectric …


The Impact Of Quantum Size Effects On Thermoelectric Performance In Semiconductor Nanostructures, Adithya Kommini Mar 2017

The Impact Of Quantum Size Effects On Thermoelectric Performance In Semiconductor Nanostructures, Adithya Kommini

Masters Theses

An increasing need for effective thermal sensors, together with dwindling energy resources, have created renewed interests in thermoelectric (TE), or solid-state, energy conversion and refrigeration using semiconductor-based nanostructures. Effective control of electron and phonon transport due to confinement, interface, and quantum effects has made nanostructures a good way to achieve more efficient thermoelectric energy conversion. This thesis studies the two well-known approaches: confinement and energy filtering, and implements improvements to achieve higher thermoelectric performance. The effect of confinement is evaluated using a 2D material with a gate and utilizing the features in the density of states. In addition to that, …


Electrical, Electronic And Optical Properties Of Mose2 And Wse2, Sushant Shashikant Rassay Jan 2017

Electrical, Electronic And Optical Properties Of Mose2 And Wse2, Sushant Shashikant Rassay

Theses

Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe2 and WSe2 have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene.

In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe2 and WSe2 are studied. The electronic band structures are presented for …


Nanostructured Organic/Inorganic Semicondutor Photovoltaics: Investigation On Morphology And Optoelectronics Performance, Aruna Wanninayake May 2016

Nanostructured Organic/Inorganic Semicondutor Photovoltaics: Investigation On Morphology And Optoelectronics Performance, Aruna Wanninayake

Theses and Dissertations

Organic solar cell is a promising technology because of the versatility of organic materials in terms of tunability of their electrical and optical properties. In addition, their relative insensitivity to film imperfections potentially allows for very low-cost high-throughput roll-to-roll processing. However, the power conversion efficiency of organic solar cell is still limited and needs to be improved in order to be competitive with grid parity. This work is focused on the design and characterization of a new organic/inorganic hybrid device to enhance the efficiency factors of bilayer organic solar cells such as: light absorption, exciton diffusion, exciton dissociation, charge transportation …


Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus Feb 2016

Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus

Dissertations, Theses, and Capstone Projects

The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for …


Structural, Dielectric, And Ferroelectric Characterization Of Lead-Free Calcium-Cerium Co-Doped Batio3 Ceramics, Juan Alberto Duran Jan 2016

Structural, Dielectric, And Ferroelectric Characterization Of Lead-Free Calcium-Cerium Co-Doped Batio3 Ceramics, Juan Alberto Duran

Open Access Theses & Dissertations

Structure, morphology, and regulation of the dielectric properties via close-composition intervals is demonstrated for variable-cerium, constant-calcium co-doped barium titanate (Ba0.80Ca0.20CeyTi1-yO3; y=0.0-0.25; referred to BCCT). The effect of variable Ce-content on the structure and dielectric properties of BCCT is investigated. X-ray diffraction spectra confirms the studied samples are mainly in BT tetragonal phase with a small secondary phase detected as CaTiO3 in BCCT for y = 0.20 and 0.25. However, the lattice parameter reduction was evident with increasing Ce-content. Composition-driven dielectric constant leap (4,000-5,500) was observed from intrinsic BCT to BCCT for (y = 0.0-0.04). The temperature dependent dielectric constant showed …


Investigation Of Contact Properties At Metal Graphene Junctions, Their Degradation And Intrinsic Limitations, Zhenjun Zhang Jan 2016

Investigation Of Contact Properties At Metal Graphene Junctions, Their Degradation And Intrinsic Limitations, Zhenjun Zhang

Legacy Theses & Dissertations (2009 - 2024)

Graphene is a two-dimensional material, comprised of a monolayer of carbon in a hexagonal lattice. Since 2004, the most promising applications of this material are high frequency devices (such as mixers and power amplifiers), as well as flexible and transparent electronics. However, these applications can’t be realized without a proper contact metal. With more understanding of the contact properties, the range of prospects for graphene’s applications can be better defined.


Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit Jan 2015

Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit

Legacy Theses & Dissertations (2009 - 2024)

The semiconductor industry continues to drive patterning solutions that enable devices with higher memory storage capacity, faster computing performance, lower cost per transistors, and higher transistor density. These developments in the field of semiconductor manufacturing along with the overall minimization of the size of transistors require cutting-edge metrology tools for characterization.


Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich Jan 2015

Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich

Legacy Theses & Dissertations (2009 - 2024)

III-Nitrides have been a heavily researched material system for decades. Their material properties are favorable for a number of applications, most commonly in the optoelectronic and power device industry. Currently a majority of commercialized devices are fabricated on sapphire and SiC substrates but these are expensive and limit the widespread commercialization of the technology. There is substantial ongoing research geared toward the development of GaN on Si substrates because of the significant cost saving that would be realized through the inexpensive, large wafer and maturity of Si fabrication. Significant challenges with the deposition of GaN on Si have, thus far, …


Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha Jan 2014

Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha

Legacy Theses & Dissertations (2009 - 2024)

The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.


Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong Jan 2014

Oxide Defect Engineering Methods For Valence Change (Vcm) Resistive Random Access Memories, Jihan Ocampo Capulong

Legacy Theses & Dissertations (2009 - 2024)

Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy concentration and oxygen vacancy defects. Oxygen vacancy defects in the switching oxide of valence-change-based ReRAM (VCM ReRAM) play a significant role in device switching properties. Oxygen vacancies facilitate resistive switching as they form the conductive filament that changes the resistance state of the device. This dissertation will present two methods of modulating the defect concentration in VCM ReRAM composed of Pt/HfOx/Ti stack: …


Fluorescence Characterization Of Quantum Dots For Use As Biomarkers, Logan M. Grimes Jun 2013

Fluorescence Characterization Of Quantum Dots For Use As Biomarkers, Logan M. Grimes

Materials Engineering

Fluorescence profiles of quantum dots (QDs) were characterized to select the ideal QDs for encapsulation in phospholipids for use as biomarkers to selectively adhere to cancer cells. QDs were synthesized and extracted 0, 30, 60, and 90 seconds after precursor compounds were mixed. These extractions were isolated by extraction time. Portions from each vial were coated in a zinc sulfide shelling procedure, leaving at least half of the QD solution unshelled. These samples were characterized over four days to monitor fluctuations in fluorescence. This was done utilizing an Ocean Optics spectrometer in conjunction with Spectra Suite software. The central wavelength, …


Understanding Defect Interactions In Si Ultra-Shallow P-N Junctions Formed By Very Low Energy Boron Implantation, Lakshmanan H. Vanamurthy Jan 2013

Understanding Defect Interactions In Si Ultra-Shallow P-N Junctions Formed By Very Low Energy Boron Implantation, Lakshmanan H. Vanamurthy

Legacy Theses & Dissertations (2009 - 2024)

One of the biggest challenges in the scaling of CMOS devices is the formation of a highly activated, abrupt, defect free Source drain extension (SDE) region. This is especially difficult with p-FET's because of the (1) Boron diffusion co-efficient enhancement from Transient enhanced diffusion (TED) and (2) low solid solubility of


Multiscale Simulation Of Laser Ablation And Processing Of Semiconductor Materials, Lalit Shokeen Jan 2012

Multiscale Simulation Of Laser Ablation And Processing Of Semiconductor Materials, Lalit Shokeen

Electronic Theses and Dissertations

We present a model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The potential predicts phonon spectra in good agreement with finite-temperature densityfunctional theory, including the lattice instability induced by the high electronic excitations. For 25fs pulse, a wide range …


Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman Jan 2012

Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman

Legacy Theses & Dissertations (2009 - 2024)

The statistical dynamical diffraction theory, which has been initially developed by late Kato remained in obscurity for many years due to intense and difficult mathematical treatment that proved to be quite challenging to implement and apply. With assistance of many authors in past (including Bushuev, Pavlov, Pungeov, and among the others), it became possible to implement this unique x-ray diffraction theory that combines the kinematical (ideally imperfect) and dynamical (the characteristically perfect diffraction) into a single system of equations controlled by two factors determined by long range order and correlation function within the structure. The first stage is completed by …


Surface Potential Measurements Of Reconfigurable P-N Junctions In Graphene, Yunfei Wang Jan 2012

Surface Potential Measurements Of Reconfigurable P-N Junctions In Graphene, Yunfei Wang

Legacy Theses & Dissertations (2009 - 2024)

Manipulation and control of electron current in a graphene p-n junction (e.g. electron waveguiding, reflection, focusing) is directly determined by the spatial gradient of the Fermi level across the junction. Sharp Fermi level gradients are associated with negative index `lensing' of electrons in graphene while broader gradients are predicted to form reflective boundaries. Quantitative metrology of the Fermi level gradient at p-n junctions is thus essential to determine device performance, validate models for device design and switch architectures, and quantitatively determine the impact of defects on device function and leakage.


Synthesis And Characterization Of Cdse-Zns Core-Shell Quantum Dots For Increased Quantum Yield, Joshua James Angell Jul 2011

Synthesis And Characterization Of Cdse-Zns Core-Shell Quantum Dots For Increased Quantum Yield, Joshua James Angell

Master's Theses

Quantum dots are semiconductor nanocrystals that have tunable emission through changes in their size. Producing bright, efficient quantum dots with stable fluorescence is important for using them in applications in lighting, photovoltaics, and biological imaging. This study aimed to optimize the process for coating CdSe quantum dots (which are colloidally suspended in octadecene) with a ZnS shell through the pyrolysis of organometallic precursors to increase their fluorescence and stability. This process was optimized by determining the ZnS shell thickness between 0.53 and 5.47 monolayers and the Zn:S ratio in the precursor solution between 0.23:1 and 1.6:1 that maximized the relative …


Synthesis And Characterization Of Metal Oxide Semiconductors For Photoelectrochemical Hydrogen Production, Sudhakar Shet Jan 2010

Synthesis And Characterization Of Metal Oxide Semiconductors For Photoelectrochemical Hydrogen Production, Sudhakar Shet

Dissertations

The goal of this thesis is to investigate the properties of metal-oxide thin films on fluorine-doped tin oxide (FTO)-coated glass substrates, prepared by using radio- frequency (RF) reactive magnetron sputtering for photoelectrochemical (PEC) applications. Metal-oxide thin films as a photoelectrode are of special interest for PEC systems to produce hydrogen in an aqueous solution by solar energy due to their low cost and potential stability.

The following list represents some of the accomplishments and results of this work:

  • Narrowing of N-incorporated ZnO (ZnO:N) was achieved by reactive sputtering in a O2/N2 mixture ambient, and ZnO:N films with …


Proton Irradiation Effects On Semiconductor Cdse/Zns Core/Shell Nanocrystals, Stephen Graham Charter Aug 2009

Proton Irradiation Effects On Semiconductor Cdse/Zns Core/Shell Nanocrystals, Stephen Graham Charter

Graduate Theses and Dissertations

The absorbance and photoluminescence measurement of semiconductor CdSe/ZnS core shell nanocrystals were reviewed and investigated after they were exposed to proton irradiation. The CdSe/ZnS core shell nanocrystals of 3.2nm and 4.4nm were commercially purchased and investigated. These nanocrystals were embedded in UV resin. Proton irradiation of energy 2MeV was applied at doses from 3 x 1013 protons cm-2 to 1.47 x 1015 protons cm-2 for both nanocrystal sizes. Absorbance measurements were conducted at 300K. Results from absorbance measurements showed slight broadening of the first exciton peak of both samples but was most noticeable in the 3.2nm nanocrystal sample. UV resin …


Growth And Characterization Of Chromium Doped Indium Oxide Diluted Magnetic Semiconductors, Ndubuisi Benjamin Ukah Jan 2009

Growth And Characterization Of Chromium Doped Indium Oxide Diluted Magnetic Semiconductors, Ndubuisi Benjamin Ukah

MSU Graduate Theses

Recently, enormous research efforts have been directed at diluted magnetic semiconductors (DMS) critical for realization for multi-functional spintronic devices. However, the origin of electronic and magnetic properties in DMS is not well understood. This study is aimed to better understand the structural, optical, magnetic, and magneto-transport property relationships of Cr-doped In2O3 (In2O3:Cr) DMS grown under different partial oxygen pressures on sapphire substrates using pulsed laser deposition technique. The thin films were characterized using various state-of-the-art techniques such as x-ray diffraction (XRD), UV-VIS spectroscopy, magnetotransport, and SQUID magnetometer. Expansions in lattice parameter (10.10 Å to 10.34 Å) and crystal size (13.9 …


Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips Mar 2004

Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips

Theses and Dissertations

Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …