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Power Dissipation Of Wse2 Field-Effect Transistors Probed By Low- Frequency Raman Thermometry, Zlatan Aksamija, Cameron J. Foss, Arnab K. Majee, Amin Salehi-Khojin
Power Dissipation Of Wse2 Field-Effect Transistors Probed By Low- Frequency Raman Thermometry, Zlatan Aksamija, Cameron J. Foss, Arnab K. Majee, Amin Salehi-Khojin
Zlatan Aksamija
The ongoing shrinkage in the size of two-dimensional (2D) electronic circuitry results in high power densities during device operation, which could cause a significant temperature rise within 2D channels. One challenge in
Raman thermometry of 2D materials is that the commonly used high-frequency modes do not precisely represent the temperature rise in some 2D materials because of peak broadening and intensity weakening at elevated temperatures. In this work, we show that a low-frequency E2g 2 shear mode can be used to accurately extract temperature and measure thermal boundary conductance (TBC) in backgated tungsten diselenide (WSe2) field-effect transistors, whereas the high-frequency …