Engineering Commons^™

Studies Of Initial Growth Of Gan On Inn, Alaa Alnami

Graduate Theses and Dissertations

III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …

Metal Assisted Nanowire Growth For Silicon Nanowire/Amorphous Silicon Composite Solar Cell, Asmaa Ali Sadoon

Graduate Theses and Dissertations

Solar cells are photovoltaic devices that convert the energy of light to electricity by the photovoltaic effect. Crystalline silicon-based solar cells are the most dominant solar cells in the market today due to the high efficiency and relatively low cost. However, the cost of such solar cell is still high due to the large amount of material that is consumed in fabricating such a device. Polycrystalline/amorphous thin films and nanomaterial technologies have emerged to reduce the high cost of c-Si based solar cells and increase the efficiency. In this research, we combined these two technologies to propose and fabricate silicon …

Photodetectors And Photovoltaic Devices Based On Semiconductor Nanomaterials, Jiang Wu

Graduate Theses and Dissertations

Photodetectors based various nanostructures and plasmon enhanced solar cells are investigated in this dissertation. The motivation of the dissertation rise is driven by urgent need of both high efficiency photodetectors and solar cells.

First, quantum dot infrared photodetectors have been intensely investigated due to their promise in high performance photodetectors. However, the strain-driven growth of quantum dots has hindered the progress of quantum dot photodetectors. The presence of strain in the device presents complexity in designing as well as defects. Therefore, in this project, new designs of quantum dot photodetector structures are presented to improve the control over detection wavelength. …