Engineering Commons^™

Fabrication And Non-Covalent Functionalization And Characterization Of Graphene-Based Devices On Novel Substrate Cadmium Trithiophosphate (Iv) — Cdps, Abayomi Omotola Omolewu

Graduate Theses and Dissertations

With graphene at the center of several application areas such as sensing, circuits, high-frequency devices for communication systems, etc., it is crucial to understand how the intrinsic properties of devices made from graphene and other materials like platinum and palladium nanoparticles affect the performance of such devices for the specific application area. Many graphene-based devices for different application areas have focused mainly on the material composition of the graphene-based devices and how it affects performance parameters for the specific application. However, it would be insightful to understand how the intrinsic electrical properties of the graphene devices for different applications affect …

Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant

Graduate Theses and Dissertations

The development of new materials for efficient optoelectronic devices from Group IV elements is the heart of Group IV photonics. This has direct ties to modern technology as the foundation for the electronics industry is silicon. This has driven the development of silicon-based optoelectronics using these other Group IV materials as silicon is a poor optical material due to its indirect band gap when compared to the III-V semiconductors that are used by most of the optoelectronics industry. While efforts have been made to integrate III-V materials onto silicon substrates, the incompatibility with the complementary metal oxide semiconductor process has …

Large-Scale Graphene Film Deposition For Monolithic Device Fabrication, Khaled Al-Shurman

Graduate Theses and Dissertations

Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors.

The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an …