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Articles 1 - 4 of 4
Full-Text Articles in Engineering
Characterization Analysis And Design Of Mid-Wave Infrared Iii- V-Based Type-Ii Superlattice Nbn Photodetectors For Space Applications, Alexander Timothy Newell
Characterization Analysis And Design Of Mid-Wave Infrared Iii- V-Based Type-Ii Superlattice Nbn Photodetectors For Space Applications, Alexander Timothy Newell
Electrical and Computer Engineering ETDs
The performance of the mid-wave infrared InGaAs/InAsSb nBn photodetector is investigated and its viability for space applications is assessed. Three structures are grown with unique absorber layer doping profiles via molecular beam epitaxy. Material and device characterizations are performed and analyzed to determine the effects of doping on fundamental material parameters and detector performance. Noise-equivalent irradiance is calculated to be a factor of 4x that of an ideal detector exhibiting Rule 07 dark current and 100% quantum efficiency, demonstrating high sensitivity. The structures are then irradiated with 63 MeV protons to evaluate the extent of performance degradation over the course …
Machine Learning Based Prediction Models For Silicon Heterojunction Solar Cell Optimization, Rahul Jaiswal
Machine Learning Based Prediction Models For Silicon Heterojunction Solar Cell Optimization, Rahul Jaiswal
Electrical and Computer Engineering ETDs
Silicon heterojunction solar cell of Heterojunction with Thin Intrinsic Layer (HIT) structure is a commercially available technology, and its market share will significantly increase by the next decade. With such a significant market share, any minor improvement in the device’s overall efficiency can be beneficial three folds - customer return on investment, industry revenue, and the overall carbon footprint (from manufacturing to recycling/ disposing of the device). Conventionally, device optimization for solar cells has been achieved using a hit & trial approach where multiple experiments are done to evaluate the best process conditions and device parameters. This approach has some …
Integration Of Thin Film Tpv Cells To Cvd Diamond Heat Spreaders, Emma J. Renteria
Integration Of Thin Film Tpv Cells To Cvd Diamond Heat Spreaders, Emma J. Renteria
Electrical and Computer Engineering ETDs
In this work, techniques to isolate thermophotovoltaic (TPV) devices from the growth substrate and their subsequent integration with Chemical Vapor Deposition (CVD) diamond heat spreaders will be discussed, with the envisioned goal of fabricating thermally managed cells. CVD diamond heat spreaders are a great option for thermal management of TPV cells. The key requirement, however, is the bonding of the TPV cell directly onto the diamond wafer without the presence of thick (>350 μm) growth substrates, which can offer significant thermal resistance.
The first approach is to release GaSb epitaxial layers from GaSb substrates. However, this is challenging due …
Investigating The Classical And Non-Classical Mechanical Properties Of Gan Nanowires, Mohammad Reza Zamani Kouhpanji
Investigating The Classical And Non-Classical Mechanical Properties Of Gan Nanowires, Mohammad Reza Zamani Kouhpanji
Electrical and Computer Engineering ETDs
Study and prediction of classical and non-classical mechanical properties of GaN is crucial due to the potential application of GaN nanowires (NWs) in piezoelectric, probe-based nanometrology, and nanolithography areas. GaN is mainly grown on sapphire substrates whose lattice constant and thermal expansion coefficient are significantly different from GaN. These discrepancies cause mechanical defects and high residual stresses and strains in GaN, which reduce its quantum efficiency.
Specifically, for nanoscale applications, the mechanical properties of materials differ significantly compared to the bulk properties due to size-effects. Therefore, it is essential to investigate the mechanical properties of GaN NWs using the non-classical …