Engineering Commons^™

Influence Of Growth Parameters On The Synthesis Of Mos2 Films, Victor Okonkwo

Honors Undergraduate Theses

Information processing is crucial in modern society, placing a great emphasis on the performance of optoelectronic devices to match ever increasing processing and memory needs. Within these devices, MoS₂ has demonstrated great potential as transistors due to its enhanced electrostatic control. As increased layer thickness of quality MoS₂ films have been shown to boost the performance of its transistors, growth parameters for the synthesis of ideally uniform and large area multilayered films via chemical vapor deposition were investigated. By increasing the flow pressure in the system and the growth time, increasing levels of thickness and nucleation density was …