Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 1 of 1
Full-Text Articles in Engineering
Plasma-Assisted Molecular Beam Epitaxial Growth Of Indium Nitride For Future Device Fabrication, Steven Paul Minor
Plasma-Assisted Molecular Beam Epitaxial Growth Of Indium Nitride For Future Device Fabrication, Steven Paul Minor
Graduate Theses and Dissertations
The need for energy conservation has heightened the search for new materials that can reduce energy consumption or produce energy by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range (0.7-6.2 eV) which spans the entire visible spectrum and encompasses a large portion of the available solar spectrum. Of the three root III-nitride semiconductors, AlN, GaN, and InN, InN has only recently become attainable epitaxially with qualities good enough …