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Full-Text Articles in Engineering
Development Of Project-Based Introductory To Materials Engineering Modules, Stacy Gleixner, Elliot Douglas, Olivia Graeve, Hilary Lackritz, Laura Demsetz, Amy Moll
Development Of Project-Based Introductory To Materials Engineering Modules, Stacy Gleixner, Elliot Douglas, Olivia Graeve, Hilary Lackritz, Laura Demsetz, Amy Moll
Faculty Publications
This paper will discuss the progress of curriculum development under an NSF, CCLI-EMD sponsored work, “Development of Project-Based Introductory to Materials Engineering Modules” (DUE # #0341633). A multi-university team of faculty are developing six lecture and three laboratory modules for use in Introductory to Materials courses. This course is required by most engineering programs in the U.S., with an annual enrollment of 50,000 students. This freshman/ sophomore class is an ideal place to excite students about their engineering majors and expose them to engineering design experiences. PRIME Modules, Project Based Resources for Introduction to Materials Engineering, are being developed that …
The Grain Size And Microstructure Of Jet-Electroplated Damascene Copper Films, Stacy H. Gleixner, Andrew Tzanavaras, Gregory Young
The Grain Size And Microstructure Of Jet-Electroplated Damascene Copper Films, Stacy H. Gleixner, Andrew Tzanavaras, Gregory Young
Faculty Publications
Electroplated damascene copper is rapidly replacing aluminum-copper alloys for on-chip interconnect metallization in advanced ultralarge scale integrated (ULSI) semiconductor devices. In addition to a high degree of (111) crystallographic texture, large defect-free grains are desired to enhance the performance and reliability of copper interconnects in such devices. The brightening additive level and dc current density of electroplating baths are two parameters that affect the process gap-filling capability and the degree of additive incorporation in these copper films. Additive incorporation can inhibit grain growth during the room-temperature recrystallization process and therefore affect the final grain size in electroplated copper films. This …
The Grain Size And Microstructure Of Jet-Electroplated Damascene Copper Films, Stacy H. Gleixner, Andrew Tzanavaras, Gregory Young
The Grain Size And Microstructure Of Jet-Electroplated Damascene Copper Films, Stacy H. Gleixner, Andrew Tzanavaras, Gregory Young
Stacy H. Gleixner
Electroplated damascene copper is rapidly replacing aluminum-copper alloys for on-chip interconnect metallization in advanced ultralarge scale integrated (ULSI) semiconductor devices. In addition to a high degree of (111) crystallographic texture, large defect-free grains are desired to enhance the performance and reliability of copper interconnects in such devices. The brightening additive level and dc current density of electroplating baths are two parameters that affect the process gap-filling capability and the degree of additive incorporation in these copper films. Additive incorporation can inhibit grain growth during the room-temperature recrystallization process and therefore affect the final grain size in electroplated copper films. This …