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Full-Text Articles in Engineering
Preparation And Properties Of Tantalum Silicide Films On Silicon Substrates, Lei Jin
Preparation And Properties Of Tantalum Silicide Films On Silicon Substrates, Lei Jin
Theses
Tantalum silicide (TaSi2) thin films were sputter deposited on p- type and n- type silicon substrates using VARIAN 3125 magnetron DC sputtering system with TaSi2 target. The thicknesses of TaSi2 thin films considered in this study are 200Å, 600Å and 1000Å, respectively. The TaSi2/Si wafers were annealed at temperatures in the range of 400 to 900°T. The sheet resistances of TaSi2 thin films with various thicknesses were measured by four-point probe before and after annealing. The sheet resistance decreases with increase in annealing temperature and decreases with the increase in thickness of TaSi …
Nanoporous Sio2/Vycor Membranes For Air Separation, Mihir Tungare
Nanoporous Sio2/Vycor Membranes For Air Separation, Mihir Tungare
Theses
Porous Vycor tubes with 40Å initial pore diameter were modified using low pressure chemical vapor deposition (LPCVD) of silicon dioxide N02). Diethylsilane (DES) in conjunction with nitrous oxide (N2O) was used as a precursor to synthesize these SiO2 films. The aim of this study was to obtain a considerable selectivity between species of comparable size and hence N2O was used. The use of N2O was believed to make the process self-limiting. DES was allowed to flow through the tube and N2O on the outside in the chamber at 550°C …
Synthesis And Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride And Titanium Nitride Films, Narahari Ramanuja
Synthesis And Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride And Titanium Nitride Films, Narahari Ramanuja
Dissertations
This study has investigated the interrelationships governing the growth kinetics, resulting compositions, and properties of boron nitride (B-C-N-H) and titanium nitride (Ti-N-Cl) films synthesized by low pressure chemical vapor deposition (LPCVD) using ammonia (NH3)/triethylamine-borane and NH3/titanium tetrachloride as reactants, respectively.Several analytical methods such as the FTIR, UVNisible spectroscopy, XPS, AES, RBS, SEM, and XRD were used to study the stoichiometry and structure of the deposited films.
The B-N-C-H films were synthesized over a temperature range of 300 to 8500C at various flow rate ratios of the reactants and total pressure range of 50 to 150 mTorr. …