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Materials Science and Engineering

New Jersey Institute of Technology

Theses/Dissertations

Optoelectronics

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Full-Text Articles in Engineering

Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip May 2019

Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip

Dissertations

Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …


Electrical, Electronic And Optical Properties Of Mos2 & Ws2, Weitao Tang Jan 2017

Electrical, Electronic And Optical Properties Of Mos2 & Ws2, Weitao Tang

Theses

Two dimensional materials such as graphene, boron nitride and transition metal dichalcogenide (TMDCs) monolayers have arisen as a new class of materials with unique properties at monolayer thickness. Their electrical, electronic and optical properties are of great importance for a variety of applications in optoelectronics as light emitters, detectors, and photovoltaic devices. This work focuses on MoS2 and WS2, which are two important members of the TMDC class of materials. The properties of monolayer MoS2 and WS2 are investigated as well as the properties of bulk MoS2 and WS2 to provide an understanding …


Electrical, Electronic And Optical Properties Of Mose2 And Wse2, Sushant Shashikant Rassay Jan 2017

Electrical, Electronic And Optical Properties Of Mose2 And Wse2, Sushant Shashikant Rassay

Theses

Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe2 and WSe2 have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene.

In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe2 and WSe2 are studied. The electronic band structures are presented for …