Engineering Commons^™

New Screening Methodology For Selection Of Polymeric Materials For Transdermal Drug Delivery Devices, Roberto P. Falcone

Dissertations

As medical advances extend the human lifespan, the level of chronic illnesses will increase and thus straining the needs of the health care system that, as a result, governments will need to balance expenses without upsetting national budgets.

Therefore, the selection of a precise and affordable drug delivery technology is seen as the most practical solution for governments, health care professionals, and consumers.

Transdermal drug delivery patches (TDDP) are one of the best economical technologies that are favored by pharmaceutical companies and physicians alike because it offers fewer complications when compared to other delivery technologies. TDDP provides increased efficiency, safety …

Surface And Bulk Passivation Of Multicrystalline Silicon Solar Cells By Silicon Nitride (H) Layer : Modeling And Experiments, Chuan Li

Dissertations

The objective of this dissertation is to study passivation effects and mechanisms in Si solar cells, specifically, the surface and bulk passivation by hydrogen-rich PECVD silicon nitride (SiN :H) antireflection layer on multicrystalline silicon (me-Si) solar cells.

The passivation of silicon surface can be achieved in two ways: by field-effect passivation and/or by neutralization of interface states. In other words, the deposition should result in a high value of fixed charge, Qf and /or a low value of interface state density, D1. The surface recombination velocity can be described by Shockley-Read-Hall (SRH) statistics.

Current SRH formalisms have failed to explain …

Boron And Phosphorous Implantation Into (100) Germanium : Modeling And Investigation Of Dopant Annealing Behavior, Yong Seok Suh

Dissertations

Germanium is increasingly being considered at this time for future silicon compatible optoelectronic and complementary metal oxide semiconductor (CMOS) device application. Germanium implantation will be a critical process for future device fabrication. However, critical properties like Pearson parameters and dopant activation temperatures are not well established. In this study, boron and phosphorus were implanted into (100) germanium with energies ranging from 20 to 320 keV and doses of 5 x 10¹³ to 5 x 10¹⁶ cm^-2. The behavior of the boron and phosphorus before and after annealing for 3 hours at 400, 600 or 800°C in …