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Low Energy Implantation Of Boron With Decaborane Ions, Maria Angela Albano

Dissertations

The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm.) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B₁₀H₁₄)vapor. Each B atom carries only ~9% of the cluster kinetic energy and the B dose per unit charge is 10 times larger than in the case of monomer ion beams. Thus, the problems of spacecharge, limiting the extraction and transport of low energy (< = 1 keV) beams of B⁺ ions, can …