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Preparation And Properties Of Tantalum Silicide Films On Silicon Substrates, Lei Jin
Preparation And Properties Of Tantalum Silicide Films On Silicon Substrates, Lei Jin
Theses
Tantalum silicide (TaSi2) thin films were sputter deposited on p- type and n- type silicon substrates using VARIAN 3125 magnetron DC sputtering system with TaSi2 target. The thicknesses of TaSi2 thin films considered in this study are 200Å, 600Å and 1000Å, respectively. The TaSi2/Si wafers were annealed at temperatures in the range of 400 to 900°T. The sheet resistances of TaSi2 thin films with various thicknesses were measured by four-point probe before and after annealing. The sheet resistance decreases with increase in annealing temperature and decreases with the increase in thickness of TaSi …