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Synthesis And Characterization Of Lpcvd Boron Nitride Films For X-Ray Lithography, Wen-Pin Kuo

Theses

Boron nitride thin films were deposited on silicon and fused quartz substrates using ammonia and the liquid precursor borane-triethylamine complex (TEAB) by low pressure chemical vapor deposition over a temperature range of 300-850°C, a pressure range of 0.21-0.6 torr, and an ammonia flow rate range of 0-740 sccm. An increased in the nitrogen content in the film due to the addition of ammonia flow resulted in a pronounced improvement in the optical transmission, an increase in the film uniformity and a decrease in the depletion effect. IR spectra of the films showed an asymmetrical wide band centered around 1400 cm …