Engineering Commons^™

Synthesis And Characterization Of Silicon Nitride Films Deposited By Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane, Yanyao Yu

Theses

Silicon nitride thin films were deposited on silicon substrates using Diethylsilane (DES) and ammonia by Plasma Enhanced Chemical Vapor Deposition (PECVD) over a temperature range of 100 - 300°C, a pressure range of 0.2 - 0.6 torr, and a ratio of NH₃/DES was varied from 6 - 26. The R.F. power and frequency were kept at 0.15 watts/cm^{2 and 100 KHz respectively. DES flow rate was set at 15 sccm for all experiments in this study. One set of experiments were performed at different values of one parameter while the other parameters were kept constant.}

The deposition …

Synthesis And Characterization Of Lpcvd Boron Nitride Films For X-Ray Lithography, Wen-Pin Kuo

Theses

Boron nitride thin films were deposited on silicon and fused quartz substrates using ammonia and the liquid precursor borane-triethylamine complex (TEAB) by low pressure chemical vapor deposition over a temperature range of 300-850°C, a pressure range of 0.21-0.6 torr, and an ammonia flow rate range of 0-740 sccm. An increased in the nitrogen content in the film due to the addition of ammonia flow resulted in a pronounced improvement in the optical transmission, an increase in the film uniformity and a decrease in the depletion effect. IR spectra of the films showed an asymmetrical wide band centered around 1400 cm …