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Electrical, Electronic And Optical Properties Of Mose2 And Wse2, Sushant Shashikant Rassay
Electrical, Electronic And Optical Properties Of Mose2 And Wse2, Sushant Shashikant Rassay
Theses
Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe2 and WSe2 have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene.
In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe2 and WSe2 are studied. The electronic band structures are presented for …
Formation And Characterization Of N/P Shallow Junctions In Sub-Micron Mosfets, Sridhar Madishetty
Formation And Characterization Of N/P Shallow Junctions In Sub-Micron Mosfets, Sridhar Madishetty
Theses
Semiconductors are the burgeoning industries in today's information age. Silicon based microelectronic devices are shrinking day-by-day in accord with the scaling dimensions reported by the International Technology Roadmap for Semiconductors (ITRS). There have been many semiconductor models and simulation programs constantly keeping pace with the continuously evolving scaling dimensions, process technology, performance and cost. Electrical characterization plays a vital role in determining the electrical properties of materials and device structures. Silicon based Metal Oxide Semiconductor Field Effect Transistor (MOSFET) forms the basis of Complimentary Metal Oxide Semiconductor (CMOS) circuits. Today's aggressive scaling approaches in silicon Integrated Circuit (IC) technology require …