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Full-Text Articles in Engineering
Oxidation Of Hafnium Diboride—Silicon Carbide At 1500 °C In Air; Effect Of Compressive Stress, Anthony J. Degregoria, Marina B. Ruggles-Wrenn, Glen E. Pry
Oxidation Of Hafnium Diboride—Silicon Carbide At 1500 °C In Air; Effect Of Compressive Stress, Anthony J. Degregoria, Marina B. Ruggles-Wrenn, Glen E. Pry
Faculty Publications
The long-term oxidation behavior of HfB2 and of HfB2-20 vol.% SiC was studied. Test samples of each material were oxidized at 1500 °C in air using a box furnace. The exposure times were 0, 0.5, 1, 2, 3, 6, 9, 12, 15, 30, 45 and 90 h. Weight gain, oxide scale composition and oxide scale thickness were characterized for both materials. Crystal structure of the surface scales was analyzed using x-ray diffraction. Oxide scales were further characterized via scanning electron microscopy with energy dispersive spectroscopy analysis. For HfB2 the oxide scale consists predominantly of porous HfO …
Creep Of Hafnium Diboride -20 Vol% Silicon Carbide At 1500°C In Air, Glen E. Pry
Creep Of Hafnium Diboride -20 Vol% Silicon Carbide At 1500°C In Air, Glen E. Pry
Theses and Dissertations
Refractory metal borides, commonly referred to as Ultra High Temperature Ceramics (UHTCs), exhibit a number of unique properties, such as extremely high melting temperature and hardness, chemical stability, high electrical and thermal conductivity and corrosion resistance. It has been demonstrated that the addition of SiC improves the oxidation resistance of ZrB2- and HfB2-based UHTCs above 1200°C by modifying the composition of the oxide scale. Addition of SiC retards the oxidation rate of ZrB2 and HfB2 by forming a protective layer of borosilicate glass. Creep deformation is one of the critical criterion for structural application of ceramics at elevated temperatures. Compression …
Carbon Allotrope Dependence On Temperature And Pressure During Thermal Decomposition Of Silicon Carbide, Munson J. Anderson
Carbon Allotrope Dependence On Temperature And Pressure During Thermal Decomposition Of Silicon Carbide, Munson J. Anderson
Theses and Dissertations
Bulk CNT and graphene films form on SiC using a metal-catalyst-free thermal decomposition approach. In this work, the background vacuum pressure and temperature used in the decomposition process are varied to investigate their impact on the type and quality of carbon allotrope formed on the SiC substrate. The carbon nanostructure growth is performed using two approaches, both of which involve intense heating (1400-1700°C) of SiC under moderate vacuum conditions (0.01 - 0.00001 Torr). The first growth method uses a conventional graphite resistance furnace capable of annealing waferscale samples over 1700°C under vacuum. Using this approach, post-growth characterization is performed using …
Creep Behavior In Interlaminar Shear Of A Cvi Sic/Sic Composite At Elevated Temperatures In Air And Steam, Matthew T. Pope
Creep Behavior In Interlaminar Shear Of A Cvi Sic/Sic Composite At Elevated Temperatures In Air And Steam, Matthew T. Pope
Theses and Dissertations
This research investigated the interlaminar shear performance of a SiC/SiC ceramic matrix composite. The interlaminar shear performance was observed in compression of double notched specimens (DNS) at 1200°C in both laboratory air and in steam. Compression to failure tests determined the as-processed interlaminar shear strength and interlaminar shear creep tests were conducted with stresses ranging from -22 MPa to -16 MPa. Primary and secondary creep regimes were observed in all creep tests. The specimens tested in creep at -16 MPa in air achieved run-out, defined as 100 hours at creep stress. The residual strength decreased slightly after 100 h of …
Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli
Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli
Theses and Dissertations
Micro-Raman (µ-Raman) spectroscopy is used to measure residual stress in two silicon carbide (SiC) poly-types: single-crystal, hexagonally symmetric 6H-SiC, and polycrystalline, cubic 3C-SiC thin films deposited on Si substrates. Both are used in micro-electrical-mechanical systems (MEMS) devices. By employing an incorporated piezoelectric stage with submicron positioning capabilities along with the Raman spectral acquisition, spatial scans are performed to reveal areas in the 6H-SiC MEMS structures that contain residual stress. Shifts in the transverse optical (TO) Stokes peaks of up to 2 cm-1 are correlated to the material strain induced by the MEMS fabrication process through the development of phonon …
Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Theses and Dissertations
Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 °C) ion-implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H-SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 °C. Trap parameters of both damage-related and species-related defects …
Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath
Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath
Theses and Dissertations
Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B …
Electrical Characterization Of 4h-Silicon Carbide P-N Junction Diodes, Michael E. Dunn
Electrical Characterization Of 4h-Silicon Carbide P-N Junction Diodes, Michael E. Dunn
Theses and Dissertations
The current conduction mechanisms of 4H-SiC p+n mesa diodes were studied using current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T), deep level transient spectroscopy (DLTS), optical observations, and reverse breakdown measurements. Temperature and voltage dependencies of diffusion, recombination, and tunneling current processes are shown to be consistent with Sah-Noyce-Shockley theory. Recombination currents having an ideality factor of A=1.85-2.1 yielded an activation energy of EA=1.56 eV, whereas for ideal recombination, A=2 and EA=1.6 eV. Forward I-V curves of poor diodes dominated by tunneling and recombination processes, showing low reverse breakdown voltages of approx. 100 V, can be correlated to DLTS results …
Electrical Characterization Of 4h-And 6h-Silicon Carbide Schottky Diodes, Jeffrey C. Wiemeri
Electrical Characterization Of 4h-And 6h-Silicon Carbide Schottky Diodes, Jeffrey C. Wiemeri
Theses and Dissertations
The electrical properties of silicon carbide (SiC) make it an excellent candidate for use in high temperature/high power devices due to its wide bandgap, high breakdown field, high electron mobility, etc. In this work two Schottky diodes of platinum (Pt) on n-type carbon faced 4H-SiC and three Schottky diodes of nickel (Ni) on n-type silicon faced 6H-SiC were electrically characterized. The diodes exhibited good performance up to 698 K for both the forward and reverse (up to -100v) bias voltages. The barrier heights measured by I-V-T tests were found to be 0.32 and 0.61 eV for the Pt/4H-SiC samples, but …
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Theses and Dissertations
Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, VSi4+(3d1) → VSi5+(3d0), or an acceptor state, VSi4+(3d1) → VSi3+(3d2). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …
Investigation Of Tension-Compression Fatigue Behavior Of A Cross-Ply Metal Matrix Composite At Room And Elevated Temperatures, Elizabeth A. Boyum
Investigation Of Tension-Compression Fatigue Behavior Of A Cross-Ply Metal Matrix Composite At Room And Elevated Temperatures, Elizabeth A. Boyum
Theses and Dissertations
This research, the first load-controlled tension-compression fatigue testing to be performed on a MMC, extends the existing knowledge of MMC fatigue damage mechanisms to include the tension compression loading condition. To accomplish this, a (0/90)2, SCS-6/Ti-15-3 laminate was subjected to tension- tension fatigue at room temperature, and tension-compression fatigue at both room temperature and 427°C. Stress and strain data was taken to evaluate the macro-mechanic behavior of the material. Microscopy and fractography were performed to characterize the damage on a micro-mechanic level. On a maximum applied stress basis, the room temperature tension-tension specimens had longer fatigue lives than the room …