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Full-Text Articles in Engineering
Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay
Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay
Theses and Dissertations
In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce …
Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard
Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard
Theses and Dissertations
Optical communication and computing systems are required to meet future information transfer and processing needs. Microcavity devices serve as an enabling technology to implement and integrate optoelectronic systems. It is important to understand the optical and mechanical properties of materials utilize within microcavity devices. Only then is it possible to accurately model and analyze structures. Microcavity structures incorporating a high aluminum content AlGaAs layers are designed, grown, processed, and measured. The processing of these devices includes the conversion of high aluminum-content AlGaAs layers to native aluminum oxide (AlO) layers through the process of thermal oxidation. This selective conversion of microcavity …
Measurement Of Ultrafast Carrier Recombination Dynamics In Mid-Infrared Semiconductor Laser Material, William T. Cooley
Measurement Of Ultrafast Carrier Recombination Dynamics In Mid-Infrared Semiconductor Laser Material, William T. Cooley
Theses and Dissertations
Shockley-Read-Hall, radiative, and Auger recombination rates in mid-infrared laser structures are measured and reported using time resolved photoluminescence (TRPL) frequency upconversion. The mid-IR lasers studied were actual InAsSb/InAlAsSb multiple-quantum-well (MQW) diode lasers emitting near 3.3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature (77 K) were measured and found to be ASRH ≈ 10 x 107sec-1, Brad ≈ 2 x 10-10 cm3sec-1 and CAuger < 10-29 cm6 …
The Effects Of Optical Feedback On Polarization Of Vertical Cavity Surface Emitting Lasers, Gregory J. Vansuch
The Effects Of Optical Feedback On Polarization Of Vertical Cavity Surface Emitting Lasers, Gregory J. Vansuch
Theses and Dissertations
Vertical Cavity Surface Emitting Lasers VCSELs are a type of semiconductor laser with a cavity oriented orthogonally to the planes of material growth. These lasers differ from conventional edge emitting lasers in several important ways. They have symmetric output beams and they are easily built into two dimensional arrays, making them very attractive as photonic components. The characteristic of interest in this thesis is polarization. While the asymmetric cavities of edge emitters exhibit a clear preference for light polarized in a particular direction, the cylindrically symmetric cavity of a VCSEL has no clear preference. Therefore, it should be relatively easy …