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Full-Text Articles in Engineering
Electrical Activation Studies Of Ion Implanted Gallium Nitride, James A. Fellows
Electrical Activation Studies Of Ion Implanted Gallium Nitride, James A. Fellows
Theses and Dissertations
A comprehensive and systematic electrical activation study of Si-implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 °C. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 °C, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were …
Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Theses and Dissertations
Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 °C) ion-implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H-SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 °C. Trap parameters of both damage-related and species-related defects …
Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath
Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath
Theses and Dissertations
Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B …
Luminescence Study Of Ion-Implanted And Mbe-Grown Er-Doped Gaas And AlXGa1-XAs, Jose E. Colon
Luminescence Study Of Ion-Implanted And Mbe-Grown Er-Doped Gaas And AlXGa1-XAs, Jose E. Colon
Theses and Dissertations
The excitation and de-excitation mechanisms of the 1.54 microns emissions, from ion implanted and MBE grown GaAs:Er and AlxGa1-xAs:Er, were studied through luminescence experiments. Experimental techniques included photoluminescence, time resolved photoluminescence, and selective excitation photoluminescence. The Er3+ emissions were studied as a function of Er concentration, aluminum mole friction, n- and p-type doping level, and annealing temperature. In addition oxygen co-doping studies were done in order to determine the role played by oxygen in the Er3+ luminescence.