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Full-Text Articles in Engineering
Effects Of Foreign Object Damage From Small Hard Particles On The High-Cycle Fatigue Life Of Ti-6a1-4v, Joseph L. Hamrick Ii
Effects Of Foreign Object Damage From Small Hard Particles On The High-Cycle Fatigue Life Of Ti-6a1-4v, Joseph L. Hamrick Ii
Theses and Dissertations
Thin rectangular samples of Ti-6Al-4V were damaged by four methods to represent foreign object damage found in turbine engine blades: 1) impact with 2 mm and 5 mm diameter glass spheres at 305 m/s, 2) impact with 2 mm and 4 mm diameter steel spheres at 305 m/s, 3) quasi-static displacement controlled indentation using steel chisels with 1 mm, 2 mm and 5 mm diameter tips and 4) shearing notches with a 2 mm diameter chisel point under a quasi-static loading condition. Finite element analysis was used to study the relationship between the stress state created by the plastic damage …
Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Theses and Dissertations
Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 °C) ion-implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H-SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 °C. Trap parameters of both damage-related and species-related defects …
Output Control Of Vertical Microcavity Light Emitting Device, James A. Lott
Output Control Of Vertical Microcavity Light Emitting Device, James A. Lott
AFIT Patents
An improved intracavity sensor based output power control for microcavity light emitting devices. An improved phototransistor transducer is both configured and physically disposed so that it passively transmits the spurious optical energy output of the microcavity light emitting device while simultaneously generating a light determined electrical signal of easily used large magnitude that is nearly free of error. The base-collector region of the transistor is disposed with a quantum well absorbing layer and produces a signal responsive to a selected emission wavelength. The configuration of the optical energy communicating transducer is arranged so that it is improved in sensitivity and …
Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath
Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath
Theses and Dissertations
Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B …