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Full-Text Articles in Engineering
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Master's Theses
The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …
Generalizable Modeling Of Charge Transport In Single Electron Transistor Devices: Application To Thermal Sensitivity In Semiconducting Island Systems, Paniz Khanmohammadi Hazaveh
Generalizable Modeling Of Charge Transport In Single Electron Transistor Devices: Application To Thermal Sensitivity In Semiconducting Island Systems, Paniz Khanmohammadi Hazaveh
Dissertations, Master's Theses and Master's Reports
Electronic devices, especially MOSFETs, have been dimensionally scaled down to enhance operation of integrated circuits, addressing challenges such as current leakage, fluctuation of intrinsic semiconductor properties, and power dissipation. Reaching dimensions below 20 nm, there are fundamental limitations that are difficult to overcome, driving alternative device paradigms to be sought utilizing the quantum mechanical behavior of electrons. Single electron transistor (SET) devices are examples of a new generation of low-power transistors designed to transport information via single electron tunneling through one or more islands separated by tunnel junctions. Experimentally explored SET devices have shown that there are advantages to using …
Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus
Zncdmgse As A Materials Platform For Advanced Photonic Devices: Broadband Quantum Cascade Detectors And Green Semiconductor Disk Lasers, Joel De Jesus
Dissertations, Theses, and Capstone Projects
The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for …