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Full-Text Articles in Engineering
Interfacial And Electrokinetic Characterization Of Ipa Solutions Related To Semiconductor Wafer Drying And Cleaning, Jin-Goo Park, Sang-Ho Lee, Ju-Suk Ryu, Yi-Koan Hong, Tae-Gon Kim, Ahmed A. Busnaina
Interfacial And Electrokinetic Characterization Of Ipa Solutions Related To Semiconductor Wafer Drying And Cleaning, Jin-Goo Park, Sang-Ho Lee, Ju-Suk Ryu, Yi-Koan Hong, Tae-Gon Kim, Ahmed A. Busnaina
Ahmed A. Busnaina
In this study, the interfacial and electrokinetic phenomena of mixtures of isopropyl alcohol (IPA) and deionized (DI) water in relation to semiconductor wafer drying is investigated. The dielectric constant of an IPA solution linearly decreased from 78 to 18 with the addition of IPA to DI water. The viscosity of IPA solutions increased as the volume percentage of IPA in DI water increased. The zeta potentials of silica particles and silicon wafers were also measured in IPA solutions. The zeta potential approached neutral values as the volume ratio of IPA in DI water increased. A surface tension decrease from 72 …
Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali
Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali
Physics Faculty Publications
The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …