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Modeling And Characterization Of P-Type Silicon Carbide Gate Turn Off Thyristors, Osama Shihadeh Saadeh
Modeling And Characterization Of P-Type Silicon Carbide Gate Turn Off Thyristors, Osama Shihadeh Saadeh
Graduate Theses and Dissertations
Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promising technology for next generation power electronic applications ranging for electric vehicles to grid-connected power routing and conversion interfaces. Several devices have been developed, and even some have been released commercially, including diodes, MOSFETs, JFETs, thyristors, gate turn-off thyristors, and IGBTs. The model development, characterization and experimental validation of SiC p-type Gate Turn-off Thyristors (GTO) is presented in this work. The GTO device in this work is being used as part of a SiC-based solid-state fault current limiter under development at the University of Arkansas' …
Fabrication Of Composite Nanomaterials For Thin Film Amorphous Silicon Solar Cells, Benjamin Seth Newton
Fabrication Of Composite Nanomaterials For Thin Film Amorphous Silicon Solar Cells, Benjamin Seth Newton
Graduate Theses and Dissertations
A material with the precise combination of amorphous silicon and polycrystalline silicon would be able to take advantage of the high absorption capabilities of amorphous silicon and the electron transport capabilities of polycrystalline silicon. Polycrystalline nanostructures in the form of wires can also take advantage of other properties of light absorption, trapping and scattering inherent in nanowire structures. These properties of high absorption and electron transport in one device would lead to advances in the search for highly efficient low cost solar cells and sensors. In this work a thin film material composed of an array of polycrystalline silicon nanostructures …