Engineering Commons^™

Hybrid Silicon Mode-Locked Laser With Improved Rf Power By Impedance Matching, Bassem M. Tossoun

Master's Theses

The mode-locked laser diode (MLLD) finds a lot of use in applications such as ultra high-speed data processing and sampling, large-capacity optical fiber communications based on optical time-division multiplexing (OTDM) systems. Integrating mode-locked lasers on silicon makes way for highly integrated silicon based photonic communication devices. The mode-locked laser being used in this thesis was built with Hybrid Silicon technology. This technology, developed by UC Santa Barbara in 2006, introduced the idea of wafer bonding a crystalline III- V layer to a Silicon-on-insulator (SOI) substrate, making integrated lasers in silicon chips possible.

Furthermore, all mode-locked lasers produce phase noise, which …

Mos Current Mode Logic (Mcml) Analysis For Quiet Digital Circuitry And Creation Of A Standard Cell Library For Reducing The Development Time Of Mixed Signal Chips, David Marusiak

Master's Theses

Many modern digital systems use forms of CMOS logical implementation due to the straight forward design nature of CMOS logic and minimal device area since CMOS uses fewer transistors than other logic families. To achieve high-performance requirements in mixed-signal chip development and quiet, noiseless circuitry, this thesis provides an alternative toCMOSin the form of MOS Current Mode Logic (MCML). MCML dissipates constant current and does not produce noise during value changing in a circuit CMOS circuits do. CMOS logical networks switch during clock ticks and with every device switching, noise is created on the supply and ground to deal with …

Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN HEMTs are undoped, these devices have higher electron mobility crucial for …