Engineering Commons^™

Vertical Gallium Nitride Schottky Diodes For Power Switching Applications., Sowmya Kolli

Electronic Theses and Dissertations

Gallium nitride (GaN) has enormous potential for use in devices operating at high power, frequency and temperature. Its wide band gap, high critical electric field and favourable carrier properties lead to lower switching losses and conduction losses in power electronic devices. However, most GaN rectifiers reported to date exhibit an ON-resistance (Ron) versus breakdown voltage much below theoretical predictions. Heteroepitaxial growth of GaN on substrates such as SiC, Si, and sapphire suffer from a high density of threading dislocations defects due to the mismatch in lattice constants and thermal expansion coefficients. Vertical devices, in which a bulk GaN substrate is …