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Fully Depleted N-Mosfets On Supercritical Thickness Strained Soi, Isaac Lauer, T. Langdo, Z.-Y. Cheng, J. Fiorenza, G. Braithwaite, M. Currie, C. Leitz, A. Lochtefeld, H. Badawi, M. Bulsara, Mark Somerville, Dimitri Antoniadis

Mark Somerville

Strained silicon-on-insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced parasitic capacitance and improved MOSFET scalability of thin-film SOI. We demonstrate fabrication of highly uniform SiGe-free SSOI wafers with 20% Ge equivalent strain and report fully depleted n-MOSFET results. We show that enhanced mobility is maintained in strained Si films transferred directly to SiO2 from relaxed Si0.8Ge0.2 virtual substrates, even after a generous MOSFET fabrication thermal budget. Further, we find the usable strained-Si thickness of SSOI significantly exceeds the critical thickness of strained Si/SiGe without deleterious leakage current effects typically …